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机译:利用热退火和脉冲准分子激光退火对Si(100)衬底上的N型和P型3C-SiC进行表征
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC;
School of Engineering and Computer Science, Washington State University, Vancouver, WA 98683, USA;
3C-SiC; FTIR; XRD; raman; pulsed excimer laser; anneal;
机译:脉冲准分子激光退火后,Si(100)衬底上的Al和N掺杂3C-SiC的XRD表征
机译:通过铝注入和脉冲准分子激光退火对p型硅(100)上的硅化物进行肖特基势垒高度调整
机译:准分子脉冲激光沉积和YSZ纳米膜在Si衬底上的退火
机译:脉冲准分子激光退火后,Si(100)衬底上的Al和N掺杂3C-SiC的XRD表征
机译:原位热退火工艺对脉冲激光沉积制造CDS Cdte薄膜太阳能电池结构,光学和电性能的影响
机译:在3C-SiC(111)/ Si(111)基板上进行ZnO(002)薄膜的RF溅射退火后处理和表征
机译:后退火时间对通过脉冲激光沉积(PLD)在MgO(100)单晶衬底上生产的Bi2Sr2Ca1Cu2O8 +薄膜的生长机理的影响