Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

摘要

We investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH (φb~p) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low φ_B~P. We demonstrate the achievement of one of the lowest reported φ_B~P of ~0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies.