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Molecular dynamics simulations with electronic stopping can reproduce experimental sputtering yields of metals impacted by large cluster ions

机译:具有电子停止功能的分子动力学模拟可以重现受大簇离子影响的金属的实验溅射产率

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HighlightsWe incorporate electronic stopping (ES) into molecular dynamics (MD) simulations to simulate continuous bombardments of keV large cluster projectiles (C60and Ar100) on metals (Ag and Au).We obtain sputtering yields very close to experimental results, which has never been achieved in the research of spike sputtering on metals bombarded by large cluster projectiles.Our results provide a possible explanation for the differences between the simulated and the experimental sputtering yields found in the previous studies of large cluster bombardments on metals.Our work is the first time that ES is considered in MD simulations of sputtering induced by large clusters, and highlights the importance of addressing ES in MD simulations.AbstractAn unsolved problem in research of sputtering from metals induced by energetic large cluster ions is that molecular dynamics (MD) simulations often produce sputtering yields much higher than experimental results. Different from the previous simulations considering only elastic atomic interactions (nuclear stopping), here we incorporate inelastic electrons–atoms interactions (electronic stopping, ES) into MD simulations using a friction model. In this way we have simulated continuous 45° impacts of 10–20keV C60on a Ag(111) surface, and found that the calculated sputtering yields can be very close to the experimental results when the model parameter is appropriately assigned. Conversely, when we ignore the effect of ES, the yields are much higher, just like the previous studies. We further expand our research to the sputtering of Au induced by continuous keV C60or Ar100bombardments, and obtain quite similar results. Our study indicates that the gap between the experimental and the simulated sputtering yields is probably induced by the ignorance of ES in the simulations, and that a careful treatment of this issue is important for simulations of cluster-ion-induced sputtering, especially for those aiming to compare with experiments.
机译: 突出显示 我们将电子停止(ES)集成到分子动力学(MD)模拟中,以模拟对keV大簇射弹的连续轰击(C 60 和Ar 100 )。 我们获得的溅射产量与实验结果非常接近,在大型簇射弹轰击的金属上进行尖峰溅射的研究中从未实现过。 • < / ce:label> 我们的结果提供了可能的解释,说明了先前对金属进行大簇轰击的研究发现的模拟和实验溅射产量之间的差异。< / ce:para> 我们的工作是首次在大型团簇引起的溅射MD模拟中考虑ES,并强调了在MD模拟中解决ES的重要性。 摘要 金属诱导溅射的研究中尚未解决的问题通过高能簇离子是动力学(MD)模拟通常会产生比实验结果高得多的溅射产量。与仅考虑弹性原子相互作用(核停止)的先前模拟不同,这里我们将非弹性电子-原子相互作用(电子停止,ES)纳入使用摩擦模型的MD模拟中。通过这种方法,我们模拟了10-20keV C 60 在Ag(111)表面上的连续45°冲击,发现计算得出的溅射产量可以非常高适当分配模型参数后,接近实验结果。相反,当我们忽略ES的影响时,产量就更高,就像以前的研究一样。我们进一步将研究范围扩展到由连续keV C 60 或Ar 100 轰击,并获得相当相似的结果。我们的研究表明,实验和模拟溅射产量之间的差距可能是由于ES在模拟中的无知所致,并且仔细研究该问题对于簇离子诱导溅射的模拟非常重要,尤其是对于那些针对与实验进行比较。

著录项

  • 来源
    《Applied Surface Science》 |2018年第30期|65-71|共7页
  • 作者单位

    Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics,State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University;

    Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics;

    Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics;

    Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Molecular dynamics; Sputtering; Cluster ions; Electronic stopping;

    机译:分子动力学;溅射;团簇离子;电子停止;

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