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Directly coupled DC-SQUIDs of YBCO step-edge junctions fabricatedby a chemical etching process operating at 77 K

机译:通过在77 K下运行的化学蚀刻工艺制造的YBCO台阶边缘结的直接耦合DC-SQUID

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High Tc directly coupled DC-SQUIDs have been successfully fabricated on chemically etched MgO substrate steps. The chemical etching was performed in a mixed acid solution of H3PO4 and H2SO4 for the best control of etched surface and roughness. YBCO thin films were deposited epitaxially on the step-edged MgO substrate by a KrF laser ablation method. Characteristics of the directly coupled DC-SQUID have been studied following the patterning and fabrication of the device. The chemically etched steps show sharper edges at the bottom of the step as well as the top unlike those made by ion milling. AFM and Raman Spectroscopy studies on the YBCO thin film deposited and patterned on chemically etched show no sign of appreciable degradation. The result is a good quality junction even at a relatively low step angle. Directly coupled DC-SQUIDs that are fabricated with this process show sweeping voltages of 160 μV at 4.2 K, and 6 μV at 77 K, respectively
机译:高Tc直接耦合的DC-SQUID已在化学蚀刻的MgO衬底台阶上成功制造。在H3PO4和H2SO4的混合酸溶液中进行化学蚀刻,以最佳地控制蚀刻的表面和粗糙度。通过KrF激光烧蚀法将YBCO薄膜外延沉积在阶梯状MgO衬底上。在器件的图案化和制造之后,已经研究了直接耦合的DC-SQUID的特性。化学蚀刻的步骤在步骤的底部和顶部显示出较尖锐的边缘,这与离子铣削产生的边缘不同。 AFM和拉曼光谱研究对在化学蚀刻后沉积并形成图案的YBCO薄膜没有明显的降解迹象。结果,即使在相对较低的步距角下,结点的质量也很高。用此工艺制造的直接耦合DC-SQUID在4.2 K时的扫描电压分别为160μV,在77 K时的扫描电压分别为6μV。

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