Process for etching and drying substrates comprises contacting the substrates with an aqueous etching solution, lifting the substrates from the solution, and completely drying the substrates directly after etching

摘要

Process for etching and drying substrates comprises contacting the substrates with an aqueous etching solution having an HF concentration of 0.5-50.0 wt.% and heated to 20-70degrees C, relatively moving the substrates and a surface of the etching solution so that the substrates can be partially lifted from the etching solution, further moving the substrates and the surface of the etching solution with a first lifting device at a speed high enough to completely remove the etching solution from the substrates, and completely drying the substrates directly after etching.