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Preparation of double-sided CeO2 buffer layers on MgO substrates for YBa2Cu3O7-x films

机译:在YBa2Cu3O7-x膜的MgO衬底上制备双面CeO2缓冲层

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Double-sided CeO2 buffer layers were fabricated by pulsed-laser deposition on 20 mm × 20 mm MgO[100] substrates to apply YBCO films using the TFA-MOD (trifluoroacetate-metalorganic deposition) process for microwave devices. The double-sided CeO2 films had the characteristics of a smooth surface (Rms < 1 nm) and a highly [100] aligned orientation, which is almost independent of thickness. We successfully obtained a YBCO film deposited by the TFA-MOD process on CeO2/MgO[100], which had a critical current density (Jc) of 6 MA/cm2 (77 K, 0 T) with good reproducibility.
机译:双面CeO2缓冲层是通过在20 mm×20 mm MgO [100]衬底上进行脉冲激光沉积制成的,并使用TFA-MOD(三氟乙酸盐-金属有机沉积)工艺将YBCO膜应用于微波器件。双面CeO2薄膜具有光滑表面(Rms <1 nm)和高度[100]取向的特性,几乎与厚度无关。我们成功地通过TFA-MOD工艺在CeO2 / MgO [100]上获得了YBCO膜,该膜的临界电流密度(Jc)为6 MA / cm2(77 K,0 T),再现性良好。

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