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Carbon-doped MgB2 thin films grown by hybrid physical-chemical vapor deposition

机译:通过混合物理化学气相沉积法生长的碳掺杂MgB2薄膜

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Carbon-doped MgB2 thin films have been produced with hybrid physical-chemical vapor deposition (HPCVD) by adding a carbon-containing metalorganic magnesium precursor, bis(methylcyclopentadienyl)magnesium, to the carrier gas. The amount of the carbon added, thus the carbon content in the films, was controlled by the flow rate of a secondary hydrogen gas flow through the precursor bubbler. X-ray diffraction and electron microscopy showed that the carbon-doped MgB2 films are textured with c-axis oriented columnar nano-grains and highly resistive amorphous areas at the grain boundaries. When the amount of carbon in the films increases, the resistivity increases dramatically while Tc decreases much more slowly as the current-carrying cross section is reduced by the grain boundaries. The temperature-dependent part of the resistivity, Δρ≡ρ(300 K)-ρ(50 K), increases only modestly until the highly resistive grain boundaries completely cut off the conducting path. The impact of the reduced cross section on critical current density Jc is discussed.
机译:通过向载气中添加含碳的金属有机镁前体双(甲基环戊二烯基)镁,通过混合物理化学气相沉积(HPCVD)制备了碳掺杂MgB2薄膜。加入的碳量,即薄膜中的碳含量,由流过前体鼓泡器的二次氢气的流速控制。 X射线衍射和电子显微镜显示,碳掺杂的MgB2薄膜具有c轴取向的柱状纳米晶粒和晶界处的高电阻非晶区。当薄膜中​​碳的含量增加时,电阻率会急剧增加,而Tc的下降则要慢得多,这是因为载流截面被晶界减小了。电阻率随温度变化的部分Δρ≡ρ(300 K)-ρ(50 K)仅适度增加,直到高电阻晶界完全切断导电路径为止。讨论了减小的横截面对临界电流密度Jc的影响。

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