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Study of MgO-Based Buffer Layer Architecture for the Development of Ni–Cu-Based RABiTS YBCO Coated Conductor

机译:基于MgO的缓冲层体系结构研究,用于开发基于Ni-Cu的RABbiTS YBCO涂层导体

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MgO films are widely used as the first buffer layer in IBAD-YBCO coated conductors, whereas there are only a few examples of its use in RABiTS YBCO coated conductors. Nevertheless MgO, though challenging in terms of lattice parameter and epitaxy, can effectively passivate the metal substrate thus enabling the use of Ni–Cu-based alloy tapes. Such substrates develop a very sharp cube texture and at the same time can be safely handled when their thickness is as low as 40 $mu{rm m}$. Epitaxial MgO films were deposited by e-beam evaporation at 400 $^{circ}{rm C}$ on biaxially textured metal substrates. A transient Pd layer as thin as 10 nm was used to alleviate the lattice mismatch between MgO and the substrate and to enhance film adhesion. Due to the reduced diffusion of oxygen in MgO, this template is effective against substrate oxidation even in the extreme conditions typical of the YBCO growth. On such a template, ${rm La}_{0.66}{rm Sr}_{0.33}{rm MnO}_{3}$ (LSMO) was epitaxially deposited by PLD. Moreover, ${rm BaZrO}_{3}$ (BZO) film was successfully deposited by CSD on MgO single crystal and is expected to epitaxially grow also on MgO film.
机译:MgO膜被广泛用作IBAD-YBCO涂层导体中的第一缓冲层,而在RABiTS YBCO涂层导体中仅使用了几个例子。尽管如此,MgO虽然在晶格参数和外延方面具有挑战性,但可以有效地钝化金属基底,从而可以使用Ni-Cu基合金带。这样的基底形成非常尖锐的立方体纹理,并且同时当它们的厚度低至40μm·rm·m时可以被安全地处理。外延MgO膜通过电子束蒸发以400℃沉积在双轴织构金属基底上。薄至10 nm的瞬态Pd层可用于缓解MgO与基材之间的晶格失配并增强膜的附着力。由于减少了氧气在MgO中的扩散,因此即使在YBCO生长的典型极端条件下,该模板也可有效抵抗底物氧化。在这种模板上,PLD外延沉积$ {rm La} _ {0.66} {rm Sr} _ {0.33} {rm MnO} _ {3} $(LSMO)。而且,CSD成功地将$ {rm BaZrO} _ {3} $(BZO)膜沉积在MgO单晶上,并有望在MgO膜上外延生长。

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