Sub-10 nm writing: focused electron beam-induced deposition in perspective

摘要

Over the past decade, focused electron beam-induced deposition has become a mature necessary part of the tool box engineers and scientists. This review presents the current state of the art in sub-10 nm focused electron beam deposition and describes the dominant mechanisms that have been found so far for this regime. Several questions regarding patterning at the highest resolution are addressed. What do our findings mean for using sub-10 nm focused electron beam deposition for industrial applications? And which fundamental issues remain to be solved? The overview shows that low-energy secondary electrons dominate the deposition process. As a result, the highest obtainable spatial resolution (averaged over many deposits) is limited by the mean free path of those electrons. Therefore, the only route to improve the resolution beyond the current appears to be using complexes that are sensitive to the high-energy electrons in the incident beam, rather than to the secondaries. Focused electron beam-induced deposition is compared to related techniques. It is on par with resist-based sub-10 nm electron beam lithography, showing similar spatial resolutions at similar electron doses. Regarding ion beam lithography, there are several distinguishing issues. Sub-10 nm writing has yet to be demonstrated for ion deposition, and although the deposition rate is relatively low when writing with electrons, electrons do not induce damage to the sample. The latter is a crucial advantage for focused electron beam-induced deposition. Finally, the main challenges regarding the applicability of sub-10 nm focused electron beam-induced deposition are discussed.