Few-layer graphene growth on 6H-SiC(0001) surface at low temperature via Ni-silicidation reactions

摘要

Few-layer graphene (FLG) has been prepared by thermal annealing of SiC crystal via the surface Ni-silicidation reactions. Results reveal that the temperature plays an important role for the final FLG quality and the optimized annealing temperature is about 800 °C. The investigation of surface morphology and microstructure for the FLG sample indicates that after the rapid cooling, the carbon atoms will segregate to form the FLG layer and the NiSix particles will congregate on the top surface. The mechanism of the FLG formation on SiC surface assisted by the Ni ultra-thin layer is briefly discussed based on the experimental results.