Semiconductor optical parametric generators in isotropic semiconductor diode lasers

摘要

We report on the characteristics of an intracavity semiconductor optical parametric generator in multiple-quantum well AlGaAs/InGaAs Bragg reflection waveguide lasers emitting between 986 and 995 nm. The cavity of the laser is phase-matched for down-conversion of pump photons to a signal between 1739 and 1767 nm and an idler between 2235 and 2328 nm. The normalized conversion efficiency is calculated to be 1.23×103 % face='roman'>W-1 face='roman'>cm-2 above laser threshold and 1.25×104 % face='roman'>W-1 face='roman'>cm-2 below threshold. The demonstrated device is potential for the realization of integrated parametric devices such as electrically pumped entangled photon-pair sources and optical parametric oscillation, where quantum optical effects can unfold.