首页> 外国专利> DISTRIBUTED BRAGG REFLECTOR SEMICONDUCTOR LASER DIODE, INTEGRATED SEMICONDUCTOR LASER, SEMICONDUCTOR LASER MODULE, AND OPTICAL NETWORK SYSTEM

DISTRIBUTED BRAGG REFLECTOR SEMICONDUCTOR LASER DIODE, INTEGRATED SEMICONDUCTOR LASER, SEMICONDUCTOR LASER MODULE, AND OPTICAL NETWORK SYSTEM

机译:分布式布拉格反射器半导体激光器二极管,集成半导体激光器,半导体激光器模块和光学网络系统

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser having a wide tuning range, in which both mode stability and high optical output are satisfied.;SOLUTION: The distributed Bragg reflector semiconductor laser diode (DBR-LD) comprises a gain region 3, a phase region 2 and a DBR1, wherein the DBR1 and the phase region 2 are single transverse mode waveguides and the gain region 3 consists of a single transverse mode waveguide 3a and a multi-mode interference waveguide 3b. In the MMI waveguide 3b, a light, entering the single transverse mode waveguide 3a, is delivered to a single transverse mode waveguide 3a at the other end with an extremely low loss, because of the interference effect. When the MMI waveguide 3b is introduced to the gain region 3 of a uniaxial mode light source, i.e. the DBR-LD, length of the gain region 3 can be shortened, without lowering the optical output, and mode stability is enhanced.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种具有宽调谐范围的半导体激光器,其中既满足模式稳定性又具有高光输出。解决方案:分布式布拉格反射器半导体激光二极管(DBR-LD)包括增益区3,相位区域2和DBR1,其中DBR1和相位区域2是单横模波导,增益区域3由单横模波导3a和多模干涉波导3b组成。在MMI波导3b中,由于干涉效应,进入单横模波导3a的光以极低的损耗被传递到另一端的单横模波导3a。当将MMI波导3b引入单轴模式光源的增益区域3(即DBR-LD)时,可以缩短增益区域3的长度,而不会降低光输出,并且可以增强模式稳定性。日本特许厅(C)2004

著录项

  • 公开/公告号JP2004055647A

    专利类型

  • 公开/公告日2004-02-19

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20020208138

  • 发明设计人 HATAKEYAMA MASARU;

    申请日2002-07-17

  • 分类号H01S5/125;H01S5/026;H04B10/04;H04B10/06;H04B10/14;H04B10/26;H04B10/28;

  • 国家 JP

  • 入库时间 2022-08-21 23:30:24

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