Semiconductor laser diode, a process for the preparation of a semiconductor laser diode and a semiconductor laser diode assembly

摘要

Semiconductor laser diode, comprising a semiconductor layer sequence (1) with a vertically one above the other semiconductor layers applied with an active layer (11) which, in operation, laser radiation by way of a radiation decoupling surface, wherein the radiation coupling-out area by a side surface of the semiconductor layer sequence (1) is formed, and with an opposite surface of the back side of the semiconductor layer sequence a resonator in a longitudinal direction, and an thermal barrier layer (2) and a metallic contact layer (5) laterally mutually adjacent to each other on a main surface (12) of the semiconductor layer sequence (1), wherein the thermal barrier layer (2) by means of an electrically insulating porous material (9) is formed andthe the contact layer (5) in strip form to the main surface (12) of the semiconductor layer sequence (1) is formed on at least two side surfaces against the thermal barrier layer (2) and is designed as the longitudinal strips, of the thermal barrier layer (2) subdivided into two regions, which in a transverse direction on both sides of the strip are arranged.