Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks

摘要

In this work, multi-bit flash-like memory cell based on Si nanowire field-effect transistor and multiple Ta2O5 charge-trapping stacks have been fabricated and fully characterized. The memory cells exhibited staircase, discrete charged states at small gate voltages. Such discrete multi-bit on one memory cell is attractive for high memory density. These non-volatile memory devices exhibited fast programming/erasing speed, excellent retention, and endurance, indicating the advantages of integrating the multilayer of charge-storage stacks on the nanowire channel. Such high-performance flash-like non-volatile memory can be integrated into the microprocessor chip as the local memory which requires high density and good endurance.