首页> 外文期刊>Applied Physics Letters >Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor
【24h】

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

机译:电解质密度对氧基离子突触晶体管突触特性的影响

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

An oxygen-based ionic synaptic transistor (O-IST) is a promising synaptic element for neuromorphic computing. In this study, we demonstrated that the density of the electrolyte plays a key role in achieving excellent synaptic characteristics in an O-IST. In a Pr_(0.7)Ca_(0.3)MnO_3-based O-IST, we precisely controlled the density of the HfO_x electrolyte and found that a low-density electrolyte could improve the ion mobility. Owing to the improved ion mobility and controlled ion migration, we demonstrated that excellent synaptic characteristics, such as a wide dynamic range, linear weight update, low operating voltage operations, and stable cyclic operation, were achieved. Finally, we confirmed an improved pattern recognition accuracy using an O-IST with an HfO_x electrolyte of optimal density.
机译:氧基离子突触晶体管(O-IST)是用于神经形态计算的有前途的突触元素。 在这项研究中,我们证明了电解质的密度在实现O-IST中实现优异的突触特征来发挥关键作用。 在PR_(0.7)CA_(0.3)的基于MNO_3的O-IST中,我们精确地控制了HFO_X电解质的密度,发现低密度电解质可以改善离子迁移率。 由于离子迁移率和受控离子迁移改善,我们证明了优异的突触特性,例如宽动态范围,线性重量更新,低操作电压操作和稳定的循环操作。 最后,我们通过具有最佳密度的HFO_X电解质的O-IST确认了改进的模式识别精度。

著录项

  • 来源
    《Applied Physics Letters》 |2021年第10期|103503.1-103503.7|共7页
  • 作者单位

    Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;

    Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;

    Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;

    Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;

    Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号