机译:电解质密度对氧基离子突触晶体管突触特性的影响
Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;
Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;
Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;
Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;
Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam-ro Nam-gu Pohang 790-784 Republic of Korea;
机译:锂离子突触晶体管近乎理想的突触函数,具有高离子电导率的锂离子突触晶体管
机译:在离子液体/聚合物混合电解质门控有机晶体管中模拟长期突触可塑性
机译:在由甲基纤维素固体电解质置换的铟 - 氧化锌突触晶体管中模仿的兴奋后突触潜力
机译:基于石墨烯和离子凝胶的调制柔性人工突触晶体管
机译:突触性突触与突触性DA释放:突触和非突触输入对钙依赖性和调节的差异。
机译:甲基纤维素固体电解质门控的氧化铟锌突触晶体管中模拟的兴奋性突触后电位
机译:全固态离子突触晶体管,用于晶圆尺度与纳米级厚度的电解液集成