机译:超导量子退火机器3D包装结构的热管理
Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8560 Japan;
Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8560 Japan;
Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8560 Japan;
Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8560 Japan;
Device Technology Research Institute National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8560 Japan;
Research Center for Emerging Computing Technology (RCECT) National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8568 Japan;
Research Center for Emerging Computing Technology (RCECT) National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Ibaraki 305-8568 Japan;
机译:各种阱宽的生长后热退火InGaN / GaN量子阱结构的微观结构研究
机译:热退火和氮成分对总体输送对荷纳斯合金的调制掺杂量子井结构的影响
机译:经过适当的热退火处理后,在30对InGaN / GaN多量子阱中形成量子点结构
机译:实用尺度Quantum退火机3D包装中传热调查
机译:介观超导结构的量子计算和量子测量。
机译:热退火对超导量子磁传感器的微调和优化
机译:通过热退火进行超导量子磁传感器的微调和优化