Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

摘要

We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal-oxide-semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only ±4 V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450℃. Besides the sharp capacitance change of 0.17 μF/V cm~(2), it was also evidenced by the high mobility of 169 cm~(2)/V s close to high-κ HfO_(2). In addition, long retention >1000 s and endurance >10~(11) stress cycles in the device suggested good memory characteristics.