Low-Temperature Crystallization of Ferroelectric Lead Zirconium Titanate (PZT) Thin-Films using Solution-Combustion Synthesis Method

摘要

Lead Zirconium Titanate (PZT) thin-films have achieved much attention for its superiorpiezoelectric and ferroelectric properties. However, to obtain device-quality PZT thin-films, a highannealing temperature (> 600 ℃), which is incompatible with the standard Si-based CMOS process, isnormally required. Although many studies have been focused on reducing the crystallization temperatureof PZT films to below 450 ℃, such as UV-assisted annealing, microwave-assisted annealing, andmodification of PZT precursor solutions, most of them result in deteriorate film’s quality. In thisstudy, we propose a facile route to realize a low-temperature crystallization (< 450 ℃) of PZT thin-filmsusing a solution-combustion synthesis (SCS) approach, hereafter so-called SCS-PZT.