Surface-modified lead-zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors

摘要

We propose the use of a La_2O_3 (LO) film as the capping layer for improvement of a semiconductor/insulator interface in a solution-processed indium-tin-oxide (ITO) ferroelectric-gate thin-film transistor (FGT) device. It is demonstrated that the LO layer acts as a good barrier film not only for preventing the interdiffusion between the ITO semiconductor and lead-zirconium-titanate (PZT) insulator layers, but also for stabilizing the PZT surface structure. The fabricated FGT device exhibited high I_(on)/I_(off) large M_w, high μ_(FE) and improved retention time of about 10~9, 3.5 V, 7.94 cm~2 V~(-1) s~(-1) and 1 day, respectively, which are comparable to or better than those obtained with FGTs fabricated by means of conventional vacuum processes. We also point out that the key origin of the interface improvement is likely due to the incorporation of La into the PZT system, forming a La surface-modified PZT system which is more stable than the pure PZT in terms of Pb volatility and formation of oxygen vacancies.