Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

摘要

Compressively strained Ga(NAsP) multi-quantum-well heterostructures with As concentration above 85% have been grown pseudomorphically on GaP substrates by metal organic vapor phase epitaxy. Detailed structural analysis applying high-resolution x-ray diffraction proves the high crystalline perfection of the samples. Optical spectroscopy appyling photoluminescence and excitation spectroscopy verify the direct-band-gap characteristic of this novel material system. The comparison of the experimental data with elemental calculations via the band anticrossing model demonstrates that the formation of direct band structure can be understood by the strong bowing of the band gap energy typical for diluted Ⅲ-Ⅴ nitrides.