Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate

摘要

The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature.