Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

摘要

Uniaxial stress effects on Coulomb-limited mobility (μ_(Coulomb)) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated experimentally. By using the four-point bending method, uniaxial stress corresponding to 0.1% strain is applied to MOSFETs along the channel direction. It is found that (μ_(Coulomb)) in p-type MOSFETs is enhanced greatly by uniaxial stress; (μ_(Coulomb)) is as sensitive as phonon-limited mobility. The high sensitivity of (μ_(Coulomb)) in p-type MOSFETs to stress arises from the stress-induced change of hole effective mass.