Ferroelectric and dielectric properties of Nd~(3+)/Zr~(4+) cosubstituted Bi_4Ti_3O_(12) thin films

摘要

Thin films of Nd~(3+)/Zr~(4+) cosubstituted Bi_4Ti_3O_(12) (BIT), i.e., Bi_(3.15)Nd_(0.85)Ti_(2.8)Zr_(0.2)O_(12) (BNTZ), were fabricated on Pt/Ti/SiO_2/Si(100) substrates by chemical solution deposition and annealed at different temperatures of 600, 650, 700, and 800℃. The effects of annealing temperature on the microstructure, leakage current, ferroelectric, and dielectric properties of the BNTZ films were investigated in detail. Significantly, compared with the Bi_(3.15)Nd_(0.85)Ti_3O_(12) film, the BNTZ thin film has a lower coercive field (2E_c) and leakage current density and a slightly larger remnant polarization (2P_r). It shows that Nd~(3+)/Zr~(4+) cosubstitution in BIT film might be an effective way to improve ferroelectric properties of BIT.