Microstructures and electrical properties of Nd~(3+)/V~(5+)-cosubstituted Bi_4Ti_3O_(12) thin films

摘要

Nd~(3+)/V~(5+)-cosubstituted Bi_4Ti_3O_(12) (Bi_(3.15)Nd_(0.85)Ti_(2.97)V_(0.03)O_(12), BNTV) thin films are prepared on Pt/Ti/SiO_2/ Si(100) substrates by a chemical solution deposition (CSD) technique. The structure and surface morphology of the films are analyzed using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy, respectively. The electrical properties of BNTV films are investigated as a function of annealing temperatures. The remanent polarization, dielectric constant and capacitance of the BNTV thin films increase with the increase of annealing temperatures in the range of 650-750 ℃. After annealing at 750 ℃, the BNTV film exhibits good polarization fatigue characteristics at least up to 1 × 10~(10) switching cycles at a frequency of 100 kHz and excellent retention properties up to 1 × 10~5 s.