Deep/shallow levels in arsenic-doped HgCdTe determined by modulated photoluminescence spectra

摘要

The modulated photoluminescence spectra have been performed on as-grown and in situ annealed arsenic-doped Hg_(1-x)Cd_xTe grown by molecular beam epitaxy. Besides the discussions about shallow levels including V_(Hg), As_(Hg), V_(Hg)-As_(Hg) complex, and Te_(Hg), two deep levels have been observed in as-grown with an ionization energy of ～77.0 and ～95.0 meV, respectively, which can be completely eliminated by annealing and temporarily ascribed to As-related clusters or interstitials.