机译:具有氧化铟锡/富勒烯源极/漏极触点的透明有机薄膜晶体管的性能提高
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan;
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan;
Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan;
Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan;
Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan;
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan;
机译:源极和漏极接触对基于阳极氧化铝栅极电介质的铟锌氧化物薄膜晶体管性能的影响
机译:源极和漏极接触对基于非晶碳纳米膜作为阻挡层的铟镓锌氧化物薄膜晶体管性能的影响
机译:使用超薄MoO_x / Pt接触介质的铟锡氧化物源极/漏极完全透明的p-MoTe_2 2D晶体管
机译:金属氧化物和钼双层改善有机薄膜晶体管的源漏接触特性
机译:透明电子用非晶铟镓锌氧化物薄膜晶体管,非易失性存储器和电路。
机译:CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
机译:组成对锌铟锡氧化物透明薄膜晶体管电性能的影响