机译:使用超薄MoO_x / Pt接触介质的铟锡氧化物源极/漏极完全透明的p-MoTe_2 2D晶体管
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;
contact resistance; hole injection layers; MoTe2; plasma-induced MoOx; transparent electronics;
机译:具有透明铟锡氧化物发射极触点的高频GaAs / Al / sub 0.25 / Ga / sub 0.75 / As异质结双极晶体管
机译:底部接触有机薄膜晶体管,具有透明的Ga掺杂的ZnO源 - 漏电极
机译:具有氧化铟锡/富勒烯源极/漏极触点的透明有机薄膜晶体管的性能提高
机译:使用具有透明铟锡氧化物(ITO)发射极触点的GaAs / AlGaAs异质结双极晶体管(HBT)制造的光控微波振荡器
机译:使用2D半导体层间改进MOS2晶体管中的触点和装置性能
机译:带有石墨烯和钛源极-漏极触点的二维MoS2场效应晶体管的功函数调整
机译:MOS晶体管中用于源极/漏极的PtSi低肖特基势垒触点的TEM研究