2D / SOURCE/DRAIN REGROWTH FOR LOW CONTACT RESISTANCE TO 2D ELECTRON GAS IN GALLIUM NITRIDE TRANSISTORS

摘要

The present disclosure relates to a gallium nitride transistor including at least one source / drain structure having a low contact resistance between a 2D electron gas and a source / drain structure of a gallium nitride transistor. The low contact resistance is a result of a single crystal structure in which at least a portion of the source / drain structure is in contact with the 2D electron gas. In one embodiment, the single crystal structure is grown with a portion of the charge induction layer of a gallium nitride transistor serving as a nucleation site.