机译:使用n(+)-ZnO缓冲层提高非晶铟镓锌氧化锌薄膜晶体管的源/漏接触电阻
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan|Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
Chung Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;
机译:接触区域中经过等离子处理的非晶铟镓锌氧化物薄膜晶体管中石墨烯源/漏电极的电特性
机译:在接触区域中对等离子体处理的非晶铟 - 镓 - 氧化锌薄膜晶体管中石墨烯源/漏电极的电学特性
机译:源极和漏极接触对基于非晶碳纳米膜作为阻挡层的铟镓锌氧化物薄膜晶体管性能的影响
机译:通过铝掺杂的ZnO中间层到金属中间层-GaAs接触结构的源/漏接触电阻降低
机译:半透明氧化锌:低温制备的铝/铜(I)氧化物薄膜异质结:结处本征ZnO缓冲层的作用
机译:在薄膜晶体管的非晶InGaZnO层上直接喷墨印刷银源/漏电极
机译:用于薄膜晶体管的非晶InGaZnO层上的银源/漏电极的直接喷墨印刷