Source / drain regrowth for low contact resistance to 2D electron gas in gallium nitride transistors

摘要

The present description relates to a gallium nitride transistor that includes at least one source / drain structure having a low contact resistance between the 2D electron gas of the gallium nitride transistor and the source / drain structure. The low contact resistance can be the result of at least a portion of the source / drain structure being a single crystal structure adjacent to the 2D electron gas. In one embodiment, the single crystal structure is grown by a portion of the charge induction layer of the gallium nitride transistor acting as a nucleation site.