Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

摘要

Orientation-controlled Si films on transparent insulating substrates are strongly desired to achieve high-efficiency thin-film solar cells. We have developed the interfacial-oxide layer modulated Al-induced low temperature (<450 ℃) crystallization technique, which enables dominantly (001) or (111)-oriented Si films with large grains (20-100 μm). These results are qualitatively explained on the basis of a model considering the phase transition of the interfacial Al oxide layers. This process provides the orientation-controlled Si templates on insulating substrates, which enables successive high quality epitaxial growth necessary for advanced Si thin-film solar cells.