Al_(0.83)In_(0.17)N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

摘要

Nitride-based blue laser diode structures with either Al_(0.83)In_(0.17)N/Al_(0.07)Ga_(0.93)N or Al_(0.87)In_(0.13)N bottom claddings have been fabricated and compared to standard structures including solely Al_(0.07)Ga_(0.93)N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al_(0.83)In_(0.17)N/Al_(0.07)Ga_(0.93)N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.