GaN-based laser diodes including a lattice-matched Al_(0.83)In_(0.17)N cladding layer

摘要

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm~2 and a peak power of 140mW at 1.2A.