Double-Heterostructure Diode Lasers Emitting at 3 Micrometers with a MetastableGaInAsSb Active Layer and AlGaAsSb Cladding Layers

摘要

Double-heterostructure diode lasers emitting at 3 micrometers have exhibitedpulsed operation at temperatures up to 255K and cw operation up to 170 K, with cw output power of 45 mW/facet at 100 K. The laser structure, grown on GaSb substrates by molecular beam epitaxy, has a metastable GaInAsSb active layer and AIGaAsSb cladding layers. The lowest pulsed threshold current density is 9 A/sq cm obtained at 40 K. The characteristic temperature is 35 K at low temperatures and 28 K above 120 K.