Logic inverters composed of controlled depletion-mode and enhancement-mode ZnO nanowire transistors

摘要

We demonstrate ZnO nanowire logic inverters consisting of n-channel depletion-mode (D-mode) transistors and n-channel enhancement-mode (E-mode) transistors that are selectively controlled by smooth- and corrugated-surface ZnO nanowires grown on two different types of substrates via a vapor transport method. Our inverter circuits, by combination of both D-mode and E-mode ZnO nanowire devices, show desired voltage transfer characteristics with a high gain and robust noise margin in a simple circuit design with less power dissipation, which makes them superior to logic inverters based on single-mode nanowire transistors.