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Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
召开年：
2004
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1.
215W pulsed class A UHF power amplification based on SiC bipolar technology
机译：
基于SiC双极技术的215W脉冲A类UHF功率放大
作者：
Chih-Fang Huang
;
Perez I.
;
Feng Zhao
;
Torvik J.
;
Irwin R.
;
Torvik K.
;
Abrhaley F.
;
Van Zeghbroeck B.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
UHF power amplifiers;
silicon compounds;
wide band gap semiconductors;
power bipolar transistors;
UHF bipolar transistors;
impedance matching;
pulsed class-A power amplifier;
UHF power amplifier;
4H-SiC BJT;
multiple finger structure;
large active area devices;
input matching;
parallel capacitor;
transmission line;
pulsed duty cycle;
self-heating;
power density;
maximum output power;
emitter finger length;
215 W;
450 MHz;
180 V;
7.5 dB;
SiC;
2.
4-terminal FinFETs with high threshold voltage controllability
机译：
具有高阈值电压可控制性的4端子FinFET
作者：
Liu Y.X.
;
Masahara A.
;
Ishii K.
;
Sekigawa T.
;
Takashirna H.
;
Yarnauchi H.
;
Tsutsurni T.
;
Sakamoto K.
;
Suzuki E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
low-power electronics;
etching;
four-terminal FinFET;
static threshold voltage control;
dynamic threshold voltage control;
ultra-low power circuits;
4-T DG MOSFET;
orientation-dependent wet etching;
atomically flat channel surface fins;
ultra-thin fins;
fine separated double gates;
fin thickness reduction;
threshold voltage tunable range;
13 nm;
Si;
3.
50 GHz resonant tunneling diode relaxation oscillator
机译：
50 GHz谐振隧道二极管弛豫振荡器
作者：
Chahal P.
;
Morris F.
;
Frazier G.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
resonant tunnelling diodes;
relaxation oscillators;
millimetre wave oscillators;
microwave oscillators;
coplanar waveguide components;
resistors;
phase noise;
timing jitter;
phase locked oscillators;
RTD relaxation oscillator;
resonant tunneling diode;
resistor;
coplanar waveguide;
CPW;
odd harmonics spectrum;
low phase noise;
low jitter;
phase locked mode;
high-speed signal processing clocks;
50 GHz;
20 GHz;
5 ohm;
InAlAs-AlAs;
4.
A combined model for Si-based resonant interband tunneling diodes grown on SOI
机译：
SOI上生长的基于Si的谐振带间隧穿二极管的组合模型
作者：
Niu Jin
;
Dongmin Liu
;
Sung-Yong Chung
;
Ronghua Yu
;
Wu Lu
;
Berger P.R.
;
Thompson P.E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
resonant tunnelling diodes;
silicon-on-insulator;
semiconductor device models;
negative resistance;
transient response;
resonant interband tunneling diodes;
SOI;
small signal model;
large signal model;
RITD;
silicon-on-insulator substrates;
dependent current source;
negative differential resistance region;
transient simulation;
serially connected inductor;
NDR region;
0 to 1 V;
0.1 ms;
Si;
5.
A high performance photodetector using a novel drift dominated structure in defected materials
机译：
一种在缺陷材料中使用新型漂移主导结构的高性能光电探测器
作者：
Sun Y.
;
Yulius A.
;
Woodall J.M.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
photodiodes;
p-i-n photodiodes;
dislocations;
thermal expansion;
electron-hole recombination;
buffer layers;
indium compounds;
III-V semiconductors;
drift dominated structure;
defected materials;
photodetector;
photodiodes;
dislocation density;
lattice mismatch;
thermal expansion coefficient difference;
recombination centers;
large electric field photo-active regions;
quantum efficiency;
lattice matching;
buffer layer;
p-i-n structure;
InP-GaP-Si;
6.
A low-temperature Si/SiGe impact diode for improved infrared sensing
机译：
用于改善红外感应的低温Si / SiGe冲击二极管
作者：
Meteer J.A.
;
Eikenberry S.S.
;
Huffman J.E.
;
Kan E.C.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
infrared detectors;
quantum well devices;
photodiodes;
low-power electronics;
photoconductivity;
doping profiles;
scanning-transmission electron microscopy;
secondary ion mass spectroscopy;
elemental semiconductors;
Ge-Si alloys;
semiconductor materials;
low-temperature impact diode;
infrared sensing;
quantum well impact diodes;
QW diode;
ideal gain structures;
IBC infrared detectors;
impurity band conduction;
low voltage operation;
low noise multiplication mechanism;
mid-IR detection;
far-IR detection;
doping profiles;
STEM;
SIMS;
photocurrent multiplication;
10 V;
10 to 150 K;
Si-SiGe;
7.
A new fabrication method for self-aligned nanoscale I-MOS (impact-ionization MOS)
机译：
自对准纳米I-MOS（冲击电离MOS）的新制造方法
作者：
Woo Young Choi
;
Byung Yong Choi
;
Dong-Soo Woo
;
Jong Duk Lee
;
Byung-Gook Park
会议名称：
《》
|
2004年
关键词：
field effect transistors;
avalanche breakdown;
impact ionisation;
semiconductor device breakdown;
self-aligned nanoscale I-MOS;
impact-ionization MOS;
avalanche breakdown voltage modulation;
gated p-i-n structure;
p-n junction barrier lowering;
current flow control;
subthreshold swing;
I-MOS scaling;
differing source/drain dopants;
channel/source i-region;
n-channel I-MOS;
biasing scheme;
130 nm;
8.
A printable form of single crystal silicon for high performance thin film transistors on plastic
机译：
可印刷形式的单晶硅，用于塑料上的高性能薄膜晶体管
作者：
Menard E.
;
Khang D.-Y.
;
Lee K.
;
Nuzzo R.
;
Rogers J.A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
silicon;
elemental semiconductors;
casting;
transfer moulding;
etching;
lithography;
printable single crystal silicon;
high performance thin film transistors;
plastic substrates;
solution cast microanoscale objects;
bulk silicon substrates;
silicon-on-insulator wafers;
resist patterning;
soft lithography;
anisotropically wet etching;
ribbons;
platelets;
sheets;
disks;
microstructured silicon;
dry transfer printing;
solution casting;
mechanically flexible TFT;
Si;
9.
A study of source/drain-on-insulator structure for extremely scaled MOSFETs
机译：
超大规模MOSFET的源极/绝缘体上漏极结构研究
作者：
Zhikuan Zhang
;
Shengdong Zhang
;
Chuguang Feng
;
Mansun Chan
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
semiconductor device models;
optimisation;
isolation technology;
source/drain-on-insulator structure;
extremely scaled MOSFET;
feature size;
ultra-shallow source/drain extensions;
heavily doped halos;
short-channel effect suppression;
series resistance;
parasitic capacitance;
SDOI structure optimization;
gate-to-drain Miller capacitance;
elevated source/drain;
oxide isolation;
shallow trench process;
10.
Air-stable chemical doping of carbon nanotube transistors CNFETs
机译：
碳纳米管晶体管CNFET的空气稳定化学掺杂
作者：
Chen J.
;
Klinke C.
;
Afzali A.
;
Avouris P.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
carbon nanotubes;
nanotube devices;
field effect transistors;
semiconductor doping;
Schottky barriers;
charge exchange;
minority carriers;
air-stable chemical p-doping;
carbon nanotube transistors;
Schottky barrier CNFET;
charge transfer;
threshold voltage tunability;
unipolar CNFET;
ambipolar CNFET;
minority carrier injection suppression;
drain induced off-current degradation;
DIBL;
C;
11.
An 8V organic complementary logic process for flexible polymeric substrates
机译：
用于柔性聚合物基板的8V有机互补逻辑工艺
作者：
Klauk H.
;
Halik M.
;
Zschieschang U.
;
Eder F.
;
Schmid G.
;
Dehm C.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
organic semiconductors;
thin film transistors;
field effect logic circuits;
dielectric thin films;
polymer films;
TFT;
organic complementary logic process;
flexible polymeric substrates;
organic complementary integrated circuits;
pentacene;
hexadecafluorocopperphthalocyanine;
p-type organic semiconductors;
n-type organic semiconductors;
solution-processed polyvinylphenol;
gate dielectric;
ring oscillator signal propagation delay;
8 V;
8 mus;
12.
An extended model for carbon nanotube field-effect transistors
机译：
碳纳米管场效应晶体管的扩展模型
作者：
Knoch J.
;
Mantl S.
;
Lin Y.-M.
;
Chen Z.
;
Avouris P.
;
Appenzeller J.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
carbon nanotubes;
nanotube devices;
field effect transistors;
semiconductor device models;
Schottky barriers;
electronic density of states;
energy gap;
Schottky barrier model;
carbon nanotube field-effect transistors;
CNFET model;
channel metal contact current injection;
density of states;
metal-modified nanotube segment;
carbon nanotube energy gap;
CNFET subthreshold characteristics;
1.4 nm;
1.2 eV;
0.7 eV;
C;
13.
An organic thin-film transistor with photolithographically patterned top contacts and active layer
机译：
具有光刻图案化的顶部触点和有源层的有机薄膜晶体管
作者：
Gu G.
;
Kane M.G.
;
Doty J.E.
;
Firester A.H.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
organic semiconductors;
thin film transistors;
photolithography;
OTFT fabrication process;
organic thin film transistors;
photolithographically patterned top contacts;
source/drain contacts;
active layer fabrication;
field-effect mobility;
top contact geometry;
organic semiconductors;
solvent degradation;
14.
a-Si:H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates
机译：
在聚合物基板上制造的a-Si：H TFT磷光OLED有源矩阵像素
作者：
Nichols J.A.
;
Jackson T.N.
;
Lu M.H.
;
Hack M.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
LED displays;
organic light emitting diodes;
phosphorescence;
amorphous semiconductors;
elemental semiconductors;
silicon;
hydrogen;
low-power electronics;
carrier mobility;
thin film transistors;
a-Si:H TFT phosphorescent OLED active matrix pixels;
polymeric substrates;
organic light emitting diode displays;
lightweight flexible rugged OLED displays;
passive matrix OLED displays;
display information content;
active-matrix pixel addressing;
display performance;
power consumption;
active matrix OLED displays;
rigid substrates;
polysilicon thin film transistors;
active elements;
device dimensions;
low voltage device current;
OLED efficiency;
TFT mobility;
hydrogenated amorphous silicon;
organic semiconductors;
OLED drive devices;
processing temperatures;
pixel arrays;
polyimide substrates;
50 micron;
Si:H;
15.
Channel confined kinesin-microtubule biomolecular nanomotors
机译：
通道受限的驱动蛋白-微管生物分子纳米马达
作者：
Huang Y.M.
;
Uppalapati M.
;
Hancock W.O.
;
Jackson T.N.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
molecular biophysics;
nanotechnology;
micromotors;
proteins;
channel confined biomolecular nanomotors;
kinesin-microtubule nanomotors;
molecular motors;
nanomachines;
micromachines;
tubulin protein cylindrical polymers;
ATP hydrolysis energy;
microtubule transport vehicles;
sensor transport vehicles;
lab-on-a-chip;
microtubule confinement;
microtubule movement control;
kinesin coated surfaces;
25 nm;
1 micron/s;
16.
Coherent transport of hole in p type semiconductive carbon nanotube
机译：
p型半导体碳纳米管中空穴的相干传输
作者：
Kamimura T.
;
Hyon C.K.
;
Kojima A.
;
Maeda M.
;
Matsumoto K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
carbon nanotubes;
nanotube devices;
field effect transistors;
ballistic transport;
hole mobility;
coherent hole transport;
p type semiconductive CNT;
carbon nanotubes;
Coulomb charging effect;
back gate type CNT field effect transistor;
drain current-gate voltage characteristics;
Coulomb diamond characteristics;
periodic negative differential conductance;
ballistic transport;
4.5 micron;
8.6 K;
C;
17.
Collector vertical scaling and performance tradeoffs in 300 GHz SiGe HBTs
机译：
300 GHz SiGe HBT中的集电极垂直缩放和性能折衷
作者：
Rieh J.-S.
;
Khater M.
;
Schonenberg K.T.
;
Pagette F.
;
Smith P.
;
Adam T.N.
;
Stein K.
;
Ahlgren D.
;
Freeman G.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
heterojunction bipolar transistors;
Ge-Si alloys;
semiconductor materials;
millimetre wave bipolar transistors;
avalanche breakdown;
semiconductor device breakdown;
doping profiles;
HBT collector vertical scaling;
HBT frequency performance tradeoffs;
avalanche breakdown;
breakdown voltage SIC dose dependence;
selectively implanted collector dose variation;
speed-breakdown voltage tradeoff;
300 GHz;
SiGe;
18.
Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTs
机译：
HEMT氮化物和砷化物通道中热声子效应的比较分析
作者：
Matulionis A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
aluminium compounds;
indium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
hot carriers;
high electron mobility transistors;
phonons;
two-dimensional electron gas;
hot-phonon effects;
HEMT;
transistor cutoff frequency;
gate length;
electron drift velocity;
two-dimensional electron gas channel;
2DEG channel;
high electron mobility transistor;
AlInAs-GaInAs-AlInAs-InP;
AlGaN-GaN;
AlGaN-AlN-GaN;
19.
Complex band structure-based non-equilibrium Green's function (NEGF) transport studies for ultra-scaled carbon nanotube (CNT) transistors CNTFETs
机译：
基于复杂能带结构的非平衡格林函数（NEGF）传输研究超规模碳纳米管（CNT）晶体管CNTFET
作者：
Tongsheng Xia
;
Register L.F.
;
Banerjee S.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
carbon nanotubes;
nanotube devices;
field effect transistors;
semiconductor device models;
Green's function methods;
band structure;
leakage currents;
tunnelling;
tight-binding calculations;
energy gap;
nonequilibrium Green's function;
NEGF;
carrier transport;
complex band structure;
ultra-scaled CNT;
CNTFET scaling;
subthreshold leakage currents;
narrow-gap CNT;
tunneling-mediated leakage currents;
carbon nanotube field-effect transistors;
electron tunneling path;
valence band;
conduction band;
zigzag nanotubes;
nanoscale CNTFET;
full-band tight-binding model;
bandgap states;
20.
Conductive copper patterning by nanotransfer printing
机译：
纳米转移印刷的导电铜图案
作者：
Felmet K.
;
Yangming Sun
;
Yueh-Lin Loo
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
nanopatterning;
copper;
metallisation;
organic compounds;
bonds (chemical);
nanotransfer printing;
conductive copper patterning;
solventless additive patterning method;
ambient conditions;
1,8-octanedithiol;
covalent bonds;
thiol functionalities;
poly(dimethylsiloxane);
PDMS;
elastomeric stamp;
molecular contact;
pattern transfer;
large-area patterning;
feature size;
1 to 500 micron;
Cu-GaAs;
21.
Current enhancement in regioregular poly(thiophene) thin film transistors
机译：
区域规则的聚噻吩薄膜晶体管的电流增强
作者：
Chabinyc M.L.
;
Jeng-Ping Lu
;
Salleo A.
;
Street R.A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
organic semiconductors;
thin film transistors;
polymer films;
carrier mobility;
semiconductor device models;
TFT current enhancement;
regioregular poly(thiophene) TFT;
thin film transistors;
solution-processed polymeric semiconductors;
large-area devices;
carrier mobility;
ideal FET behavior deviations;
channel length;
current-voltage characteristics;
10 micron;
22.
Device optimization for digital sub-threshold operation
机译：
针对数字亚阈值操作的设备优化
作者：
Paul B.C.
;
Roy K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
digital integrated circuits;
low-power electronics;
circuit optimisation;
integrated circuit design;
logic design;
logic gates;
device optimization;
optimized transistor structures;
digital sub-threshold circuit operation;
inverter chain;
power consumption;
ultra-low power applications;
500 MHz;
23.
Digital lithography for thin-film transistor fabrication
机译：
用于薄膜晶体管制造的数字光刻
作者：
Wong W.S.
;
Lujan R.
;
Ready S.E.
;
Chabinyc M.L.
;
Arias A.C.
;
Street R.A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
lithography;
masks;
silicon;
elemental semiconductors;
amorphous semiconductors;
image sensors;
digital lithography;
thin-film transistor fabrication;
digital-lithographic method;
electronically generated etch mask;
digitally aligned etch mask;
jet-printed process surface;
hydrogenated amorphous silicon TFT arrays;
feature size;
layer-to-layer registration;
pixel resolution;
on/off ratios;
threshold voltage;
a-Si sensor media;
image sensor;
X-ray detector;
light detector;
40 micron;
5 micron;
2 to 3 V;
4 inch;
Si;
24.
Direct measurements of the AC performance of carbon nanotube field effect transistors
机译：
直接测量碳纳米管场效应晶体管的交流性能
作者：
Singh D.V.
;
Jenkins K.A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
nanotube devices;
field effect transistors;
semiconductor device measurement;
S-parameters;
power measurement;
electric current measurement;
frequency response;
frequency measurement;
S-parameter measurement;
power measurement;
current measurement;
carbon nanotube field effect transistors;
nanoelectronics;
CNFET direct performance observation;
frequency response measurements;
C;
25.
Directly lithographic top contacts for pentacene organic thin-film transistors
机译：
并五有机薄膜晶体管的直接光刻顶部触点
作者：
Kuo C.C.
;
Jackson T.N.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
organic semiconductors;
contact resistance;
photolithography;
carrier mobility;
electrical contacts;
organic thin-film transistors;
pentacene OTFT;
small molecule organic semiconductors;
top contact fabrication;
contact resistance;
lithographic source/drain contacts;
carrier mobility;
direct patterned contacts;
26.
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs
机译：
栅极凹陷对AlGaN / GaN HEMT线性特性的影响
作者：
Chini A.
;
Buttari D.
;
Coffie R.
;
Shen L.
;
Palacios T.
;
Heikman S.
;
Chakraborty A.
;
Keller S.
;
Mishra U.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
high electron mobility transistors;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
linearisation techniques;
microwave field effect transistors;
HEMT linearity characteristics;
gate recessing effects;
planar structures;
gate recessed structures;
RF two-tone measurements;
device transconductance;
10 GHz;
AlGaN-GaN;
27.
Electrical properties of p- and n-type silicon nanowires
机译：
p型和n型硅纳米线的电性能
作者：
Yanfeng Wang
;
Cabassi M.
;
Tsung-Ta Ho
;
Kok-Keong Lew
;
Redwing J.
;
Mayer T.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
silicon;
elemental semiconductors;
nanowires;
electrical resistivity;
electric admittance;
doping profiles;
p-type silicon nanowires;
n-type silicon nanowires;
nanowire electrical properties;
semiconductor nanowires;
field effect device conduction channels;
complementary logic circuits;
four-point resistivity measurements;
gate-dependent conductance measurements;
unintentionaly-doped nanowires;
vapor-liquid-solid grown SiNW;
background doping concentration;
Si;
28.
Electronic and magnetic properties of ferromagnetic p-(In,Mn)As-InAs heterojunctions spintronic device applications
机译：
铁磁p-（In，Mn）As / n-InAs异质结的电子和磁性自旋电子器件应用
作者：
May S.J.
;
Wessels B.W.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
manganese compounds;
indium compounds;
ferromagnetic materials;
p-n heterojunctions;
vapour phase epitaxial growth;
Kerr electro-optical effect;
magnetic force microscopy;
magnetoresistive devices;
magnetoelectronics;
ferromagnetic p-n heterojunctions;
atmospheric pressure meta organic vapor phase epitaxy;
ferromagnetic films;
magneto-optical Kerr effect;
MOKE;
variable-temperature magnetic force microscopy;
J-V characteristics;
I-V characteristics magnetic field dependence;
heterojunction magnetoresistive properties;
spintronic devices;
78 to 300 K;
MnAs-InAs;
29.
Fabrication and testing of pentacene thin-film transistors that use water-dispersible polyaniline electrodes
机译：
使用水分散性聚苯胺电极的并五苯薄膜晶体管的制造和测试
作者：
Kwang Seok Lee
;
Blanchet G.B.
;
Feng Gao
;
Yueh-Lin Loo
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
conducting polymers;
pentacene thin-film transistors;
water-dispersible polyaniline electrodes;
conductive PANI;
organic electronics;
polymer electronics;
polyaniline patterning;
electrical conductivity;
pre-doped aqueous PANI solutions;
PANI/substrate interactions;
TFT source/drain electrodes;
20 micron;
30.
Fabrication of complimentary single-electron inverter in single-wall carbon nanotubes
机译：
单壁碳纳米管中互补单电子逆变器的制备
作者：
Tsuya D.
;
Suzuki M.
;
Aoyagi Y.
;
Ishibashi K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
single electron transistors;
Coulomb blockade;
single electron devices;
carbon nanotubes;
logic gates;
complimentary single-electron inverter fabrication;
single-wall carbon nanotubes;
single-electron devices;
SED;
Coulomb blockade effects;
ultra-low power consumption;
molecular scale miniaturization;
dot size;
classical CB effect;
SWNT;
single electron logic device;
electrical performance;
temperature range;
SET;
1.5 to 10 K;
C;
31.
Fin width scaling criteria of body-tied FinFET in sub-50 nm regime
机译：
在50 nm以下的体式FinFET的鳍宽缩放标准
作者：
Hye Jin Cho
;
Jeong Dong Choe
;
Ming Li
;
Jin Young Kim
;
Sung Hoon Chung
;
Chang Woo Oh
;
Eun-Jung Yoon
;
Dong-Won Kim
;
Donggun Park
;
Kinam Kim
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
fin width scaling criteria;
body-tied FinFET;
subthreshold swing;
drain induced barrier lowering;
DIBL;
fully depleted fin;
gate length/fin width criterion;
threshold voltage control;
20 nm;
5 nm;
32.
Flexible substrate a-Si:H TFTs for space applications
机译：
用于空间应用的柔性基板a-Si：H TFT
作者：
Lisong Zhou
;
Jackson T.
;
Brandon E.
;
West W.
会议名称：
《》
|
2004年
关键词：
thin film transistors;
space vehicle electronics;
radiation effects;
adhesives;
silicones;
annealing;
flexible substrate TFT;
space application TFT;
Kapton/sup (R)/ polyimide flexible substrates;
deployment-like mechanical stresses;
radiation exposure;
substrate flatness;
thermal transfer;
pressure-sensitive silicone gel adhesive layer;
glass carriers;
fast electron irradiation;
irradiation-induced device changes;
low-temperature thermal annealing;
substrate stressing;
1 Mrad;
Si:H;
33.
Full-swing pentacene organic thin-film transistor inverter with enhancement-mode driver and depletion-mode load
机译：
具有增强模式驱动器和耗尽模式负载的全摆幅并五苯有机薄膜晶体管逆变器
作者：
Cheon An Lee
;
Sung Hun Jin
;
Keum Dong Jung
;
Jong Duk Lee
;
Byung-Gook Park
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
logic gates;
organic semiconductors;
thin film transistors;
circuit noise;
full-swing TFT;
pentacene organic thin-film transistors;
logic inverter circuit;
depletion mode load OTFT;
enhancement mode driver OTFT;
minimum output voltage;
noise margin;
34.
GaN based piezo sensors
机译：
GaN基压电传感器
作者：
Neuburger M.
;
Zimmermann T.
;
Benkart P.
;
Kunze M.
;
Daumiller I.
;
Dadgar A.
;
Krost A.
;
Kohn E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
piezoelectric transducers;
piezoresistive devices;
piezoelectric semiconductors;
etching;
piezo resistor;
piezo sensors;
free-standing membrane structures;
free-standing cantilever structures;
piezo response;
base layer bulk polarization doping;
111-oriented Si wafers;
RIE;
ICP dry etching;
stress induced pn-junction effects;
GaN;
35.
High power AlGaN/GaN heterojunction FETs for base station applications
机译：
适用于基站应用的高功率AlGaN / GaN异质结FET
作者：
Ando Y.
;
Okamoto Y.
;
Nakayama T.
;
Inoue T.
;
Hataya K.
;
Miyamoto H.
;
Senda M.
;
Hirata K.
;
Kosaki M.
;
Shibata N.
;
Kuzuhara M.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
power field effect transistors;
microwave power transistors;
semiconductor heterojunctions;
high power heterojunction FET;
base station systems;
field-modulating plate structure;
short channel planar FET;
recessed-gate devices;
203 W;
4 W;
2 GHz;
30 GHz;
AlGaN-GaN;
36.
High-efficiency, Ge-on-SOI lateral PIN photodiodes with 29 GHz bandwidth
机译：
具有29 GHz带宽的高效，SO上Ge侧向PIN光电二极管
作者：
Koester S.J.
;
Schaub J.D.
;
Dehlinger G.
;
Chu J.O.
;
Ouyang Q.C.
;
Grill A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
p-i-n photodiodes;
germanium;
elemental semiconductors;
silicon-on-insulator;
Ge-on-SOI photodiodes;
lateral PIN photodiodes;
slow carriers;
ultrathin SOI;
high-efficiency photodiodes;
bandwidth-efficiency product;
group-IV photodetectors;
850 nm;
29 GHz;
Ge-SiO/sub 2/-Si;
37.
High-temperature spin-polarized quantum dot light-emitting diodes
机译：
高温自旋极化量子点发光二极管
作者：
Holub M.
;
Fathpour S.
;
Chakrabarti S.
;
Topolancik J.
;
Bhattacharya P.
;
Lei Y.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
light emitting diodes;
semiconductor quantum dots;
electron spin polarisation;
molecular beam epitaxial growth;
semimagnetic semiconductors;
ferromagnetism;
electron energy loss spectra;
high-temperature quantum dot LED;
spin-polarized quantum dots;
spin-LED;
quantum dot multilayers;
LT-MBE grown layers;
dilute magnetic quantum dots;
ferromagnetic behavior;
quantum confinement;
epitaxial strain;
disorder;
electron energy loss spectroscopy;
EELS;
QD;
InAs:Mn-GaAs:Mn-GaAs;
38.
Hot carrier reliability of HfSiON NMOSFETs with poly and TiN metal gate
机译：
具有多晶硅和TiN金属栅极的HfSiON NMOSFET的热载流子可靠性
作者：
Sim J.H.
;
Lee B.H.
;
Choi R.
;
Matthews K.
;
Kwong D.L.
;
Larson L.
;
Tsui P.
;
Bersuker G.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
permittivity;
dielectric thin films;
semiconductor device testing;
silicon;
elemental semiconductors;
titanium compounds;
electrodes;
electron traps;
hafnium compounds;
silicon compounds;
hot carriers;
semiconductor device reliability;
hot carrier reliability;
HfSiON NMOSFET;
gate leakage current;
reliability;
hafnium based metal oxides;
hot carrier effects;
high-k gate dielectrics;
hot carrier-induced degradation;
high density structural defects;
bulk electron trapping;
transistor parameters;
hot carrier degradation properties;
high-k gate stacks;
poly gate NMOSFET;
TiN gate NMOSFET;
HfSiON gate dielectric;
HfSiON;
TiN;
Si;
SiO/sub 2/;
39.
Impact of reducing RTA temperature on sub-10nm ultra-thin body SOI
机译：
降低RTA温度对10nm以下超薄体SOI的影响
作者：
Jong-Heon Yang
;
Jihun Oh
;
Won-ju Cho
;
Chang-Geun Ahn
;
Kiju Im
;
In-Bok Baek
;
Park J.
;
Seongjae Lee
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
silicon-on-insulator;
rapid thermal annealing;
semiconductor doping;
plasma immersion ion implantation;
RTA temperature;
ultra-thin body SOI;
UTB SOI;
plasma doping;
PLAD;
rapid thermal annealing;
device scalability;
SOI thickness;
short-channel effect suppression;
10 nm;
40.
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation
机译：
改进的高功率厚GaN覆盖的AlGaN / GaN HEMT，无表面钝化
作者：
Shen L.
;
Buttari D.
;
Heikman S.
;
Chini A.
;
Coffie R.
;
McCarthy L.
;
Chakraborty A.
;
Keller S.
;
DenBaars S.P.
;
Mishra U.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
power HEMT;
microwave power transistors;
microwave field effect transistors;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
semiconductor epitaxial layers;
leakage currents;
semiconductor device breakdown;
thick-capped HEMT;
unpassivated HEMT;
high power density;
epitaxial dispersion reduction method;
surface-channel distance reduction;
surface potential fluctuations reduction;
gate-recessed device structure;
gate leakage;
low breakdown;
sapphire;
57 percent;
50 V;
4 GHz;
AlGaN-GaN;
41.
Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs
机译：
接入电阻对毫米波AlGaN / GaN HEMT射频性能的影响
作者：
Palacios T.
;
Rajan S.
;
Shen L.
;
Chakraborty A.
;
Heikman S.
;
Keller S.
;
DenBaars S.P.
;
Mishra U.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
power HEMT;
millimetre wave field effect transistors;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
semiconductor device testing;
current density;
electric resistance;
access resistance;
rf performance;
mm-wave AlGaN/GaN HEMT;
GaN-based power transistors;
Monte Carlo simulations;
pinch-off;
saturation frequency;
maximum frequency performance;
parasitic resistances;
channel current density;
differential access resistance;
AlGaN-GaN;
42.
Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs
机译：
异质结构设计对AlGaN / GaN HEMTs噪声系数的影响
作者：
Sanabria C.
;
Xu H.
;
Palacios T.
;
Chakraborty P.
;
Heikman S.
;
Mishra U.K.
;
York R.A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
high electron mobility transistors;
microwave field effect transistors;
semiconductor heterojunctions;
semiconductor device noise;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
equivalent circuits;
HEMT heterostructure design;
noise figure;
epilayer structures;
barrier aluminum composition;
sapphire substrates;
SiC substrates;
drain current;
frequency response;
equivalent circuit models;
4 to 12 GHz;
5 GHz;
AlGaN-GaN;
AlN;
43.
Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs
机译：
离子注入，用于与AlGaN / GaN HEMT的非合金欧姆接触
作者：
Yu H.
;
McCarthy L.
;
Rajan S.
;
Keller S.
;
Denbaars S.P.
;
Speck J.S.
;
Mishra U.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
high electron mobility transistors;
ion implantation;
ohmic contacts;
contact resistance;
silicon;
elemental semiconductors;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
ion implantation;
unalloyed ohmic contacts;
HEMT;
as-deposited ohmic contact resistance;
large periphery devices;
manufacturability;
access resistance;
gate-source spacing;
lateral dopant engineering;
Si;
AlGaN-GaN;
44.
IR emission from Schottky barrier carbon nanotube FETs
机译：
肖特基势垒碳纳米管FET的红外发射
作者：
Martel R.
;
Misewichtt J.
;
Tsang J.C.
;
Avouris P.
会议名称：
《》
|
2004年
关键词：
infrared sources;
carbon nanotubes;
nanotube devices;
Schottky barriers;
Schottky gate field effect transistors;
electronic density of states;
electroluminescent devices;
charge injection;
electron-hole recombination;
near IR emission carbon nanotubes;
Schottky barrier carbon nanotube FET;
single-walled carbon nanotubes;
SWNT;
tubular 1D nanostructures;
/spl pi/ conjugated C-C bonds;
nanotube band structure;
density of states;
sharp DOS peaks;
optical interband transitions;
electroluminescence device;
ambipolar carbon nanotube FET;
charge injection;
metal-nanotube contact barrier;
carrier band gap recombination;
electrically pumped optical emission source;
electron-hole interactions;
C;
45.
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
机译：
具有原位和离子注入p阱掺杂的横向缩放Si / SiGe n-MODFET
作者：
Koester S.J.
;
Saenger K.L.
;
Chu J.O.
;
Ouyang Q.C.
;
Ott J.A.
;
Canaperi D.F.
;
Tornello J.A.
;
Jahnes C.V.
;
Steen S.E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
high electron mobility transistors;
doping profiles;
ion implantation;
carrier mobility;
silicon;
elemental semiconductors;
Ge-Si alloys;
semiconductor materials;
laterally-scaled MODFET;
in situ p-well doping;
ion-implanted p-well doping;
vertical scaling;
halo doping;
2D channel dopant incorporation;
mobility degradation;
buried p-well doping;
undoped channel region;
subthreshold behavior;
self-gain;
speed-power product;
Si-SiGe;
46.
Linearity performance of GaN HEMTs with field plates
机译：
带场板的GaN HEMT的线性性能
作者：
Wu Y.-F.
;
Saxler A.
;
Wisleder T.
;
Moore M.
;
Smith R.P.
;
Sheppard S.
;
Chavarkar P.M.
;
Parikh P.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
power HEMT;
microwave field effect transistors;
microwave power transistors;
linearisation techniques;
HEMT linearity performance;
electric field modification;
power density;
power-added-efficiency;
large periphery scaling;
power devices;
field plate length;
4 GHz;
55 percent;
149 W;
2 GHz;
108 V;
GaN;
47.
Low noise GaAs-based avalanche photodiodes for long wavelength applications
机译：
基于低噪声GaAs的雪崩光电二极管，适用于长波长应用
作者：
Ng B.K.
;
David J.P.R.
;
Soong W.M.
;
Ng J.S.
;
Tan C.H.
;
Liu H.Y.
;
Hopkinson M.
;
Robson P.N.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
semiconductor device noise;
avalanche photodiodes;
optical receivers;
infrared detectors;
ionisation;
aluminium compounds;
gallium arsenide;
III-V semiconductors;
semiconductor device measurement;
low noise GaAs-based avalanche photodiodes;
APD;
telecommunication systems;
InP multiplication medium;
InGaAs absorption medium;
excess noise performance;
hole to electron ionization coefficient ratio;
Al/sub 0.8/Ga/sub 0.2/As multiplication region material;
avalanche excess noise;
bulk structures;
bulk Al/sub x/Ga/sub 1-x/As diodes;
sub-micron Al/sub x/Ga/sub 1-x/As diodes;
long wavelength GaAs-based APD;
noise characteristics;
1.3 micron;
1.55 micron;
Al/sub 0.8/Ga/sub 0.2/As;
InP-InGaAs;
48.
Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias
机译：
低压，高性能InAs / AlSb HEMT，在100 mV漏极偏置下的功率增益超过100 GHz
作者：
Bergman J.
;
Nagy G.
;
Sullivan G.
;
Ikhlassi A.
;
Brar B.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
low-power electronics;
high electron mobility transistors;
millimetre wave field effect transistors;
indium compounds;
aluminium compounds;
III-V semiconductors;
low-voltage HEMT;
high-performance HEMT;
drain bias;
ultra-low power circuits;
100 GHz;
100 mV;
100 nm;
235 GHz;
300 mV;
InAs-AlSb;
49.
Materials and device developments for ultraviolet LEDs and laser diodes
机译：
紫外线LED和激光二极管的材料和器件开发
作者：
Bergmann M.
;
Kuhr T.
;
Haberem K.
;
Hussell C.
;
Abare A.
;
Emerson D.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
ultraviolet sources;
semiconductor lasers;
light emitting diodes;
optimisation;
life testing;
ultraviolet LED;
UV laser diodes;
ultraviolet light emitters;
UV optical sources;
device optimization;
lifetime tests;
short wavelength devices;
lifetime increase;
efficiency increase;
emission wavelength;
390 nm;
AlGaInN;
50.
Measurement of electron transport and mechanical properties of single molecules
机译：
测量单分子的电子传输和机械性能
作者：
Nongjian Tao
;
Bingqian Xu
;
Xiaoying Xiao
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
bonds (chemical);
electric admittance measurement;
gold;
electrodes;
molecular electronic states;
molecular electronics;
force measurement;
single molecule electron transport;
single molecule mechanical properties;
gold electrodes;
molecular junctions;
inter-electrode conductance;
inter-electrode force;
covalent bond breakdown;
molecule/electrode bonding strength;
single molecule effective spring constant;
electronic coupling;
statistical analysis;
Au;
51.
Modeling of narrow-width SOI devices: the impact of quantum mechanical size quantization effects and unintentional doping on device operation
机译：
窄宽度SOI器件建模：量子力学尺寸量化效应和无意掺杂对器件操作的影响
作者：
Ahmed S.S.
;
Vasileska D.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
silicon-on-insulator;
quantisation (quantum theory);
doping profiles;
electron-electron interactions;
scaling limits;
narrow-width SOI devices;
quantum mechanical effects;
size quantization effects;
unintentional doping;
dual-gate SOI devices;
FinFET;
focused ion beam MOSFET;
electron-electron interactions;
carrier thermalization;
52.
Nanoparticle floating gate flash memories
机译：
纳米粒子浮栅闪存
作者：
Banerjee S.
;
Kim D.
;
Kim T.
;
Weltzer L.
;
Liu Y.
;
Tang S.
;
Palard M.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
flash memories;
nanoparticles;
dielectric thin films;
Ge-Si alloys;
semiconductor materials;
low-power electronics;
semiconductor quantum dots;
Coulomb blockade;
single electron devices;
tunnelling;
nanoparticle floating gate flash memories;
high-k gate tunneling dielectrics;
channel SiGe cold cathodes;
low power operation;
low voltage operation;
flash cell speed improvement;
charge retention;
dot size control;
dot spatial distribution;
templated growth;
single quantum dots;
Coulomb blockade;
single electron charge memories;
few electron charge memories;
vertical cell structures;
cross-point array;
wordline/bitline intersections;
multilevel storage;
SiGe;
53.
Nano-scale MOSFETs with programmable virtual source/drain
机译：
具有可编程虚拟源极/漏极的纳米级MOSFET
作者：
Byung Yong Choi
;
Yong-Kyu Lee
;
Woo Young Choi
;
Han Park
;
Dong-Soo Woo
;
Jong Duk Lee
;
Byung-Gook Park
;
Chang-Woo Oh
;
Chilhee Chung
;
Donggun Park
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
nanoelectronics;
semiconductor device models;
tunnelling;
impact ionisation;
nanoscale MOSFET;
programmable virtual source/drain;
SONOS memory cell transistors;
nonvolatile memory technology;
programmable threshold voltage;
drain leakage;
TSM transistor;
nitride charged states;
tunneling;
impact ionization;
short channel effect control;
10 pA;
30 nm;
54.
Novel self-defined field emission transistors with PECVD-grown carbon nano-tubes on silicon substrates
机译：
新型自定义场发射晶体管，在硅衬底上具有PECVD生长的碳纳米管
作者：
Koohsorkhi J.
;
Hoseinzadegan H.
;
Mohajerzadeh S.
;
Robertson M.D.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
nanotube devices;
carbon nanotubes;
field emission;
cathodes;
chemical vapour deposition;
lithography;
self-defined field emission transistors;
PECVD-grown carbon nanotubes;
silicon substrates;
vertically grown carbon nanotubes;
field emission cathodes;
voltage controlled emission level;
laterally-placed gate electrode;
silicon cathode electrode;
microscale lithography;
transistor arrays;
switching transistors;
C;
55.
Novel structures enabling bulk switching in carbon nanotube FETs
机译：
新型结构可实现碳纳米管FET的批量开关
作者：
Lin Y.-M.
;
Appenzeller J.
;
Avouris P.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
carbon nanotubes;
nanotube devices;
field effect transistors;
doping profiles;
carbon nanotube FET;
self-aligned CNFET;
bulk-switched CNFET;
bulk switching;
enhancement mode operation;
p-i-p doping profile;
n-i-n doping profile;
drain-induced-barrier-lowering;
DIBL;
C;
56.
Optical near-field enhancement of metal-aperture VCSEL with nano metal particle
机译：
纳米金属粒子增强金属孔径VCSEL的光学近场增强
作者：
Hashizume J.
;
Koyama F.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
surface emitting lasers;
gallium arsenide;
III-V semiconductors;
gold;
nanoparticles;
surface plasmons;
VCSEL optical near-field enhancement;
metal-aperture VCSEL;
nano metal particle;
optical near-field intensity;
polarization dependence;
symmetric-shaped nano-particle;
localized surface plasmons;
optical power density;
high-density optical storage;
GaAs;
Au;
57.
Pentacene based RFID transponder circuitry
机译：
基于并五苯的RFID应答器电路
作者：
Baude P.F.
;
Ender D.A.
;
Kelley T.W.
;
Haase M.A.
;
Muyres D.V.
;
Theiss S.D.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
transponders;
radiofrequency identification;
thin film circuits;
polymer films;
logic circuits;
amplitude modulation;
UHF integrated circuits;
pentacene;
RFID transponder;
radio frequency identification;
polymeric shadow masks;
thin film integrated circuits;
ac power;
logic circuits;
amplitude modulation circuitry;
RFID reader;
1.19 MHz;
8 bit;
58.
Physical limits on binary logic switch scaling
机译：
二进制逻辑开关定标的物理限制
作者：
Lent C.S.
;
Mo Liu
;
Timler J.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
logic circuits;
semiconductor quantum dots;
cellular automata;
thermodynamics;
binary logic switch scaling;
energy dissipation scaling limits;
clocked quantum-dot cellular automata;
QCA power gain;
room temperature operation;
charge-based binary computational;
CMOS;
equations of motion;
thermal environment;
energy flow;
circuit heat generation;
thermodynamic limitations;
1.5 nm;
59.
Planar device isolation for InP based DHBTs
机译：
基于InP的DHBT的平面设备隔离
作者：
Parthasarathy N.
;
Dong Y.
;
Scott D.
;
Urteaga M.
;
Rodwell M.J.W.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
heterojunction bipolar transistors;
indium compounds;
III-V semiconductors;
isolation technology;
doping profiles;
ion implantation;
silicon;
iron;
electrodes;
planar device isolation;
InP based DHBT;
mesa technology;
etching;
process planarity;
integration levels;
selective implantation;
Fe implantation;
InP collector-subcollector layers;
selective Si implantation;
isolated N++ subcollector;
InP:Fe;
InP:Si;
60.
Polymeric substrate microcrystalline-silicon strain sensor
机译：
聚合物基板微晶硅应变传感器
作者：
Lisong Zhou
;
Jackson T.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
strain sensors;
piezoresistive devices;
electric sensing devices;
silicon;
elemental semiconductors;
bridge circuits;
condition monitoring;
semiconductor device measurement;
polymeric substrate microcrystalline-silicon strain sensor;
metallic foil piezoresistors;
semiconductor piezoresistors;
strain sensors;
shape monitoring applications;
strain monitoring applications;
Wheatstone bridge configuration;
semiconductor sensors;
crystalline silicon;
strain sensitivity;
sensor area;
bridge power;
metal resistor bridges;
a-Si:H strain sensors;
glass substrates;
/spl mu/C-Si strain sensors;
flexible polyimide substrates;
gage factor;
sensor yield;
sensor power;
Si;
61.
Precision engineered semimetal-semiconductor diodes for mm-wave and THz rectifiers
机译：
精密设计的半金属半导体二极管，用于毫米波和太赫兹整流器
作者：
Zimmerman J.
;
Brown E.
;
Gossard A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
submillimetre wave detectors;
semimetallic thin films;
submillimetre wave diodes;
Schottky diodes;
erbium compounds;
indium compounds;
aluminium compounds;
gallium arsenide;
silicon;
elemental semiconductors;
III-V semiconductors;
semimetal-semiconductor diodes;
mm-wave rectifiers;
THz rectifiers;
room-temperature zero-bias rectifier;
sub-mm wave detector;
current induced flicker;
burst noise;
square-law detector;
noise floor;
MBE grown rectifier diodes;
lattice mismatch;
dislocation-free single crystal;
Schottky interface;
100 GHz;
1 THz;
ErAs-InAlGaAs:Si-InP;
62.
Printing of polymer field-effect transistors
机译：
印刷聚合物场效应晶体管
作者：
Sirringhaus H.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
insulated gate field effect transistors;
polymer films;
organic semiconductors;
self-assembly;
dielectric thin films;
charge injection;
polymer field-effect transistors;
direct printing;
polymer semiconductor;
planar-channel polymer transistors;
vertical-channel polymer transistors;
channel length;
thin self-assembled polymer dielectrics;
charge transport;
charge injection;
FET;
TFT;
printed transistor circuits;
active matrix displays;
250 to 500 nm;
50 nm;
63.
Resonant tunneling permeable base transistor based pulsed oscillator
机译：
基于谐振隧穿可渗透基极晶体管的脉冲振荡器
作者：
Lind E.
;
Lindstrom P.
;
Nauen A.
;
Wernersson L.-E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
pulse circuits;
UHF oscillators;
voltage-controlled oscillators;
resonant tunnelling transistors;
negative resistance devices;
semiconductor heterojunctions;
permeable base transistors;
resonant tunneling based oscillator;
pulsed oscillator;
permeable base transistor;
three terminal resonant tunneling transistor;
embedded nanometer-sized metallic features;
semiconductor heterostructures;
resonant tunneling diodes;
RT-PBT;
negative differential region biasing;
negative resistance oscillator;
fundamental oscillation frequency;
harmonics;
gate voltage frequency control;
voltage controlled oscillator;
800 MHz;
2.6 GHz;
64.
Resonant tunneling quantum dot infrared photodetector (RT-QDIP): separating dark current and photocurrent
机译：
共振隧穿量子点红外光电探测器（RT-QDIP）：分离暗电流和光电流
作者：
Su X.H.
;
Stiff-Roberts A.D.
;
Chakrabarti S.
;
Singh J.
;
Bhattacharya P.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
infrared detectors;
photodetectors;
resonant tunnelling devices;
semiconductor quantum dots;
dark conductivity;
photoconductivity;
aluminium compounds;
gallium arsenide;
RT-QDIP;
quantum dot infrared photodetectors;
dark current reduction;
photocurrent;
resonant tunneling barriers;
resonant tunneling filter double barrier;
electron tunneling probability;
peak detection wavelength;
broad energy distribution electrons;
8 to 14 micron;
AlGaAs;
65.
Schottky-barrier-height engineering for strained-Si MOSFETs
机译：
应变硅MOSFET的肖特基势垒高度工程
作者：
Ikeda K.
;
Yamashita Y.
;
Endoh A.
;
Hikosaka K.
;
Mimura T.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
scanning-transmission electron microscopy;
MOSFET;
Schottky barriers;
electrodes;
energy gap;
stress analysis;
fast Fourier transforms;
semiconductor device measurement;
electric current;
Schottky-barrier-height engineering;
strained-Si MOSFET;
Schottky source/drain MOSFET;
SSD-MOSFET;
ballistic MOSFET;
high-energy carrier injection;
metal source;
intrinsic channel;
high-drive current;
semiconductor bandgap modulation;
SBH engineering controllability;
stress control;
bandgap control;
silicide/strained-Si interfaces;
strain-distribution analysis;
STEM micrographs;
strained-Si channel SSD-MOSFET;
fast-Fourier transform mapping;
Si;
66.
Shape engineering of dipole-coupled nanomagnets for magnetic logic devices
机译：
用于磁逻辑器件的偶极耦合纳米磁体的形状工程
作者：
Imre A.
;
Csaba G.
;
Ling Zhou
;
Orlov A.
;
Bernstein G.H.
;
Porod W.
;
Metlushko V.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
cellular automata;
quantum dots;
magnetic logic;
dipole coupling;
ferromagnetic materials;
shape engineering;
dipole-coupled nanomagnets;
binary information;
magnetic quantum-dot cellular automata;
magnetic logic devices;
logic functionality;
nanomagnet arrays;
correlation length;
antiferromagnetic ordering;
coupled single-domain ferromagnet chains;
switching-field variations;
closely-spaced magnetic dots;
magnetic dot shapes;
MQCA applications;
70 to 300 nm;
67.
Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates LED display applications
机译：
高温透明塑料基板上的短通道非晶硅TFT LED显示应用
作者：
Long K.
;
Gleskova H.
;
Wagner S.
;
Sturm J.C.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
LED displays;
silicon;
elemental semiconductors;
short channel TFT;
amorphous-silicon TFT;
high-temperature clear plastic substrates;
short-channel performance;
freestanding substrate fabrication process;
OLED;
AMOLED displays;
180 degC;
Si;
68.
Simulation of interface roughness in DGMOSFETs using non-equilibrium Green's functions
机译：
使用非平衡格林函数模拟DGMOSFET中的界面粗糙度
作者：
Fonseca J.
;
Kaya S.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
interface roughness;
MOSFET;
semiconductor device models;
nanoelectronics;
interface states;
doping profiles;
electric current;
Green's function methods;
electrodes;
silicon-on-insulator;
fluctuations;
interface roughness simulation;
nonequilibrium Green's functions;
MOSFET scaling;
dual-gate architectures;
SOI substrates;
on current;
off current;
DGMOSFET design;
MOSFET geometry;
doping profiles;
fluctuation effects;
random doping;
interface effects;
modified nanoMOS simulator;
NEGF;
rough interfaces;
Si-SiO/sub 2/;
69.
Simulation study of tunneling devices with quantum confinement in source and drain
机译：
源漏中具有量子约束的隧穿装置的仿真研究
作者：
Katayama Y.
;
Laux S.E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
resonant tunnelling transistors;
tunnel transistors;
semiconductor quantum wells;
quantum well devices;
electrodes;
semiconductor device models;
tunneling device simulation;
source quantum confinement;
drain quantum confinement;
inter-band tunneling devices;
resonant tunneling devices;
discrete energy levels;
coupled quantum well devices;
self-consistent DC analyses;
electron transport;
2D computer simulation;
70.
Single-monolayer inkjetted oligothiophene organic TFTs exhibiting high performance and low leakage
机译：
单层喷墨低聚噻吩有机TFT表现出高性能和低泄漏
作者：
Chang P.C.
;
Molesa SE
;
Murphy A.R.
;
Frechet J.M.J.
;
Subramanian V.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
organic semiconductors;
low-power electronics;
monolayers;
carrier mobility;
self-assembly;
crystal morphology;
OTFT;
organic thin film transistors;
low-power analog circuits;
single-monolayer organic TFT;
inkjetted organic TFT;
oligothiophene precursor;
ultra-low leakage;
high mobility;
self-assembled crystalline morphology;
nonuniform printed droplets;
electrostatic characteristics;
71.
SOI MOSFET-based quantum tunneling device - FIBTET
机译：
基于SOI MOSFET的量子隧穿器件-FIBTET
作者：
Kyung Rok Kim
;
Hyun Ho Kim
;
Ki-Whan Song
;
Jung Im Huh
;
Jong Duk Lee
;
Byung-Gook Park
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
tunnel transistors;
negative resistance devices;
silicon-on-insulator;
MOSFET;
tunnelling;
quantum tunneling device;
FIBTET;
negative-differential transconductance;
room temperature NDT;
field-induced band-to-band tunneling effect transistor;
degenerately doped SOI MOSFET;
negative-differential conductance;
NDC;
critical dose condition;
72.
Study of subthreshold electron mobility behavior in SOI-MESFETs
机译：
SOI-MESFET中亚阈值电子迁移率行为的研究
作者：
Khan T.
;
Vasileska D.
;
Thornton T.J.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
silicon-on-insulator;
Schottky gate field effect transistors;
electron mobility;
semiconductor device models;
low-power electronics;
Monte Carlo methods;
MOSFET;
subthreshold electron mobility;
micropower circuits;
sub-threshold MOSFET;
digital watches;
medical implants;
sub-threshold transistor operation;
power consumption;
device structures;
low-power requirements;
RF requirements;
pacemakers;
SOI-MESFET candidate structure;
device cut-off frequency;
electron mobility improvement;
Ensemble Monte Carlo device simulator;
simulations;
Si MESFET channels;
SOI MOSFET channels;
Si-SiO/sub 2/;
Si;
73.
The molecular engineering of acenes: avoiding the drawbacks of improved solubility organic electronics materials
机译：
乙炔的分子工程：避免溶解度提高的缺点有机电子材料
作者：
Anthony J.E.
;
Payne M.M.
;
Landis C.A.
;
Bullock J.E.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
organic semiconductors;
carrier mobility;
fluorescence;
solubility;
electrical conductivity;
thin film transistors;
charge-carrier mobility;
intermolecular spacing;
decomposition mechanisms;
electroactive materials;
fluorescence quantum efficiency;
acene molecular engineering;
solubility;
organic electronics materials;
anthracene;
tetracene;
pentacene;
acene solubilization;
substituents;
material solid-state order;
conductivity;
TFT mobilities;
74.
Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrate
机译：
在体硅衬底上制造的三维多桥沟道MOSFET（MBCFET）
作者：
Sung-Young Lee
;
Eun-Jung Yoon
;
Sung-Min Kim
;
Chang Woo Oh
;
Ming Li
;
Dong-Won Kim
;
Ilsub Chung
;
Donggun Park
;
Kinam Kim
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
MOSFET;
semiconductor epitaxial layers;
silicon;
elemental semiconductors;
Ge-Si alloys;
semiconductor materials;
3D thin-body MBCFET;
multi-bridge-channel MOSFET;
single-bridge-channel MOSFET;
multiple epitaxial layer growth;
damascene gate process;
double-gate structure;
short channel effect suppression;
drive current;
SBCFET;
90 nm;
SiGe-Si-SiGe-Si;
75.
Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germanium
机译：
低温应力辅助Cu诱导的横向生长和锗的无金属结晶制造的隧穿和耗尽型TFT
作者：
Hekmatshoar B.
;
Mohajerzadeh S.
;
Shahrjerdi D.
;
Robertson M.D.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
thin film transistors;
tunnelling;
germanium;
elemental semiconductors;
copper;
crystallisation;
island structure;
hydrogenation;
recrystallisation annealing;
tunneling TFT;
depletion-mode TFT;
low-temperature stress-assisted copper-induced lateral growth;
metal-free crystallization;
Cu-seeded islands;
hydrogenation;
annealing;
150 degC;
200 degC;
Ge-Cu;
Ge;
76.
Velocity overshoot effects and transit times in III-V nitride HFETs : a Monte Carlo study
机译：
Ⅲ-Ⅴ族氮化物HFET中的速度过冲效应和过渡时间：蒙特卡洛研究
作者：
Singh M.
;
Yuh-Renn Wu
;
Singh J.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
high electron mobility transistors;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
Monte Carlo methods;
high field effects;
semiconductor device models;
velocity overshoot effects;
transit times;
III-V nitride HFET;
Monte Carlo simulation;
steady state channel velocities;
electron effective mass;
short channel devices;
high drain source biases;
scattering;
overshoot suppression;
high field region length;
transconductance;
unity current gain frequency;
device noise;
AlGaN-GaN;
GaAs;
77.
Vertical tunnel diodes on high resistivity silicon
机译：
高电阻率硅上的垂直隧道二极管
作者：
Yan Yan
;
Jialin Zhao
;
Qingmin Liu
;
Wei Zhao
;
Seabaugh A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
tunnel diodes;
equivalent circuits;
thermal diffusion;
semiconductor device models;
semiconductor device measurement;
S-parameters;
electric impedance;
equivalent circuit model;
vertical tunnel diodes;
high resistivity silicon;
rapid thermal diffusion;
spin-on diffusants;
RF device model extraction;
microwave frequency S-parameter measurements;
RF impedance measurements;
Schulman-Broekaert analytic model;
resonant tunneling diode;
SPICE;
ADS modeling;
45 MHz to 30 GHz;
100 mm;
78.
Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy
机译：
硅基分子共振隧穿二极管的扫描隧道显微镜表征
作者：
Guisinger N.P.
;
Basu R.
;
Greene M.E.
;
Baluch A.S.
;
Hersam M.C.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
silicon;
elemental semiconductors;
resonant tunnelling diodes;
scanning tunnelling microscopy;
molecular electronics;
metal-semiconductor-metal structures;
energy gap;
negative resistance;
doping profiles;
silicon-based molecular resonant tunneling diodes;
scanning tunneling microscopy;
molecular electronics;
metal-molecule-metal junctions;
charge transport;
molecule-semiconductor junctions;
energy band gap;
negative differential resistance;
NDR bias voltage control;
Si(100) surface;
substrate doping;
majority charge carrier;
asymmetric current-voltage characteristics;
silicon integrated circuit technology;
Si;
79.
Gallium nitride electronics: Watt is the limit? summary of GaN semiconductor devices
机译：
氮化镓电子产品：功率极限？ GaN半导体装置的概要
作者：
Mishra U.K.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
high electron mobility transistors;
power transistors;
microwave transistors;
power semiconductor switches;
MISFET;
heterojunction bipolar transistors;
Schottky gate field effect transistors;
gallium nitride semiconductor devices;
HEMT;
microwave transistors;
power switching transistors;
MOSHFET;
MISHFET;
MISFET;
HBT;
POLFET;
p-n junction leakage;
modulated 3D electron slab;
graded polarization system;
nondoped MESFET;
GaN;
80.
Electron Y-branch switches
机译：
电子Y分支开关
作者：
Worschech L.
;
Hartmann D.
;
Reitzenstein S.
;
Forchel A.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
semiconductor switches;
electron beam lithography;
semiconductor heterojunctions;
nanoelectronics;
amplifiers;
solid-state rectifiers;
circuit bistability;
logic gates;
electron Y-branch switches;
narrow stem source;
split branching section drains;
cascaded YBS;
electron beam lithography;
YBS heterostructure;
nanoelectronic amplifiers;
rectifiers;
bistable output logic gates;
NAND gates;
AND gates;
100 nm;
GaAs-AlGaAs;
81.
Electronics anywhere TFT and display technology examples
机译：
无处不在的电子产品TFT和显示技术示例
作者：
Jackson T.
会议名称：
《Device Research Conference, 2004. 62nd DRC. Conference Digest Includes 'Late News Papers' volume》
|
2004年
关键词：
LED displays;
organic light emitting diodes;
thin film transistors;
organic semiconductors;
active matrix organic light emitting diode displays;
AMOLED;
thin film transistors;
organic TFT;
OTFT;
display technology;
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