机译:等离子体辅助分子束外延在Si(111)上生长高质量N极性AIN(0001)
Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA;
Department o£ Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
机译:利用CrN缓冲层在等离子辅助分子束外延在(0001)Al_2O_3上生长N极性GaN
机译:等离子体辅助分子束外延在Si(111)上生长和表征N-极性GaN膜
机译:等离子体辅助分子束外延在6H-SiC(0001)衬底上相干生长平均GaN摩尔分数高达20%的AIN / GaN短周期超晶格
机译:等离子体辅助分子束外延的Si(111)对Si(111)的生长:应用于表面声波器件
机译:电子回旋共振等离子体辅助分子束外延在硅(111)衬底上生长和评估氮化镓。
机译:N极InAlN势垒高电子迁移率晶体管的等离子体辅助分子束外延
机译:使用氨分子束外延在4H-siC(0001)和si(111)衬底上以低生长速率生长的高质量alN(0001)层的原位NC-aFm测量