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Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics

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1.High Performance Cu-Metallized GaAs HEMTs Processing and Reliability

机译：高性能Cu-Metallized GaAs Hemts加工和可靠性
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
2.APPLICATION OF SiO_2 FILMS DEPOSITED BY TICS/O_2 PECVD TO InSb MISFET

机译：用TICS / O_2 PECVD沉积的SiO_2薄膜的应用到INSB MISFET
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
3.Peak Voltage Insensitivity to Quantum Well Width in Resonant Interband Tunneling Diodes

机译：峰值电压不敏感性在谐振间隧穿二极管中的量子阱宽度
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
4.SINGLE CRYSTAL Gd_2O_3 FILMS EPITAXIALLY GROWN ON GaAs - A NEW DIELECTRIC FOR GaAs PASSIVATION

机译：在GaAs上外延生长的单晶GD_2O_3薄膜 - GaAs钝化的新电介质
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
5.GROWTH AND CHARACTERIZATION OF GaN AND AL_xGA_(1-x)N THIN FILMS ACHIEVED VIA LATERAL- AND/OR PENDEO-EPITAXIAL OVERGROWTH ON 6H-SIC(0001) SUBSTRATES

机译：通过6H-SiC（0001）基板的横向和/或pendeo外延过生长实现GaN和Al_XGA_（1-X）N薄膜的生长和表征
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
6.DYNAMICS OF WET OXIDATION OF HIGH-AL-CONTENT III-V MATERIALS

机译：高含量III-V材料湿氧化动力学
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
7.Si/SiGe and III-V Integrated Circuit Technology for Next Generation High-Speed Systems: Comparisons and Tradeoffs

机译：下一代高速系统的Si / SiGe和III-V集成电路技术：比较和权衡
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
8.IN SITU MONITORING OF III-V PROCESSING

机译：原位监测III-V处理
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
9.FABRICATION OF INTEGRATED FERRITE/SEMCONDUCTOR CIRCULATORS

机译：集成铁氧体/半导体循环器的制造
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
10.OPTICAL ABSORPTION IN ZnSe-GaAs HETEROVALENT QUANTUM STRUCTURES

机译：ZnSe-GaAs的光学吸收在ZnSe-Gaas异常量子结构中
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
11.GROWTH AND CHARACTERIZATION OF AMORPHOUS A1N THIN FILMS BY REACTIVE MAGNETRON SPUTTERING AT LOW TEMPERATURE

机译：低温反应磁控溅射无定形A1N薄膜的生长与表征
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
12.HETEROEPITAXY OF GaAs ON CaF_2/Si(111) BY SURFACE FREE ENERGY MODULATION METHOD

机译：通过表面自由能调节方法对CAF_2 / SI（111）的GaAs的杂肝
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
13.A MODEL OF WAFER BONDING BY ELASTIC ACCOMMODATION

机译：弹性舒适度晶圆粘合模型
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
14.FERMI-LEVEL EFFECT AND JUNCTION CARRIER CONCENTRATION EFFECT ON BORON DISTRIBUTION IN Ge_xSi_(1-x)/Si HETEROSTRUCTURES

机译：FERMI水平效应和结载流量对硼分布的GE_XSI_（1-X）/ Si异质结构的影响
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
15.GROWTH OF IMPROVED GaAs/Si: SUPPRESSION OF VOLMER-WEBER NUCLEATION FOR REDUCED THREADING DISLOCATION DENSITY

机译：改进的GaAs / Si的生长：抑制Volmer-Weber成核的降低线程脱位密度
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
16.PHOTONIC BANDGAP FORMATION BY WAFER BONDING AND DELAMINATION

机译：通过晶圆粘合和分层形成光子带隙形成
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
17.STUDY OF SI_(1-x)GE_x / SI / SI_(1-x)GE_x HETEROSTRUCTURES WITH ABRUPT INTERFACES FOR ULTRAHIGH MOBILITY FETS

机译：用于超高移动FET的突然界面的Si_（1-x）Ge_x / Si / Si_（1-X）Ge_x异质结构
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
18.A MECHANISM FOR THE REMOVAL OF DISLOCATIONS IN SOI COMPLIANT SUBSTRATE SYSTEMS

机译：用于去除SOI柔顺底物系统中脱位的机制
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
19.INTEGRATION OF SILICON AND DIAMOND, ALUMINUM NITRIDE OR ALUMINUM OXIDE FOR ELECTRONIC MATERIALS

机译：用于电子材料的硅和金刚石，氮化铝或氧化铝的整合
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
20.MONOLITHIC INTEGRATION OF III-V MICROCAVITY LEDs ON SILICON DRIVERS USING CONFORMAL EPITAXY

机译：III-V微腔LED使用保形外延硅驱动器的单片集成
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
21.SURFACE TERMINATION OF THE Ge(100) AND Si(100) SURFACES BY USING DHF SOLUTION DIPPING

机译：通过使用DHF溶液浸渍Ge（100）和Si（100）表面的表面终止
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
22.UNIQUE DEFECT-INDUCED DONOR STRUCTURE AT THE LATTICE MISMATCHED InAs/GaP HETEROINTERFACE

机译：晶格错配InAs / Gap异质面上的独特缺陷诱导的供体结构
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
23.Annihilation Radii for Dislocations Intercepting a Free Surface with Application to Heteroepitaxial Thin Film Growth

机译：湮灭半径用于截留自由表面与杂轴薄膜生长的脱位
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
24.Thermal Reliability of Pt/Ti/Pt/Au Schottky Contact on InP with a GalnP Schottky Barrier Enhancement Layer

机译：GALNP肖特基屏障增强层PT / TI / PT / AU肖特基接触的热可靠性
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
25.IN SITU CONTROL OF WET ETCHING USING SPECTROSCOPIC ELLIPSOMETRY

机译：以光谱椭圆形测定法对湿法蚀刻的原位控制
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
26.IMPROVED PROCESS WINDOW USING LOW-CARBON Ge_xSi_(1-x-y)C_y EPITAXIAL LAYERS

机译：使用低碳ge_xsi_（1-x-y）c_y外延层改进的过程窗口
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
27.FERMI-LEVEL EFFECT AND JUNCTION CARRIER CONCENTRATION EFFECT ON p-TYPE DOPANT DISTRIBUTION IN III-V COMPOUND SUPERLATTICES

机译：FERMI级效应和结载流量对III-V复合超晶格的p型掺杂剂分布
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
28.FE-MODELING AND PHYSICAL TESTING OF IGBTs FOR PRESS-PACKAGING

机译：用于压封装IGBT的FE模型和物理测试
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
29.DEEP LEVEL CHARACTERIZATION OF INTERFACE-ENGINEERED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON GaAs

机译：通过分子束外延在GaAs上生长的界面工程ZnSE层的深层特征
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
30.FIRST-PRINCIPLES INVESTIGATION OF THE ORDERED Si_4C COMPOUND

机译：订购SI_4C化合物的一致原则调查
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
31.QUANTITATIVE EXPERIMENTAL DETERMINATION OF THE EFFECT OF DISLOCATION - DISLOCATION INTERACTIONS ON STRAIN RELAXATION IN LATTICE MISMATCHED HETEROSTRUCTURES

机译：定量实验测定脱位脱位相互作用对晶格错配异质结构中应变松弛的影响
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
32.EFFECTS OF CF_4 REACTIVE ION ETCHING ON Si-DOPED Al_(0.2)Ga_(0.8)As

机译：CF_4反应离子蚀刻对Si掺杂Al_（0.2）Ga_（0.8）的影响
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
33.STRAIN RELAXATION DURING HETEROEPITAXY ON TWIST-BONDED THIN GALLIUM ARSENIDE SUBSTRATES

机译：在扭曲粘合的薄砷化镓基材上的杂肝期间应变松弛
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
34.SPATIAL DISTRIBUTION OF LUMINESCENT CENTERS IN ORGANOMETALLIC VAPOR PHASE EPITAXY GROWN Zn_xCd_(1-x)Se/InP(001)

机译：有机金属气相外延生长Zn_XCD_（1-X）SE / InP（001）的亮度中心的空间分布
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
35.OPTIMIZATION OF MICROSTRUCTURE AND DISLOCATION DYNAMICS IN In_xGa_(1-x)P GRADED BUFFERS GROWN ON GaP BY MOVPE

机译：MOVPE在间隙上生长的in_xga_（1-x）P分级缓冲器中的微结构和错位动力学的优化
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
36.GROWTH OF AIN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY: APPLICATION TO SURFACE ACOUSTIC WAVE DEVICES

机译：等离子体辅助分子束外延的Si（111）对Si（111）的生长：应用于表面声波器件
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
37.CHARACTERIZATION OF SINGLE-CRYSTAL 3C-SIC EPITAXIAL LAYERS ON SI SUBSTRATES

机译：Si基板上单晶3C-SiC外延层的表征
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
38.EFFECT OF MICROSTRUCTURE AND CHEMICAL BONDING ON THE ADHESION STRENGTH OF A SILICON/POLYMER INTERFACE FOR MICROELECTRONIC PACKAGING APPLICATIONS

机译：微观结构和化学键合对微电子包装应用硅/聚合物界面粘合强度的影响
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
39.DEEP LEVEL DEFECT STUDIES IN MOCVD-GROWN In_xGa_(1-x)As_(1-y)N_y FILMS LATTICE-MATCHED TO GaAs

机译：MOCVD-CROOW in_xga_（1-x）AS_（1-Y）N_Y电影格栅与GAAs的深度缺陷研究
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
40.KINETIC MODELLING OF THE SELECTIVE EPITAXY OF GaAs ON PATTERNED SUBSTRATES BY HVPE. APPLICATION TO THE CONFORMAL GROWTH OF LOW DEFECT DENSITY GaAs LAYERS ON SILICON

机译：HVPE通过图案化底物的选择性外延的动力学建模。应用于硅上低缺陷密度GaAs层的保形生长
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
41.MOCVD-PREPARATION AND IN-SITU / UHV-ANALYSIS OF EPITAXIAL INP-FILMS

机译：MOCVD-制剂和原位/ UHV分析外延INP膜
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
42.MOBILITY CHARACTERIZATION OF P-TYPE AND N-TYPE STRAINED Si_(1-x-y)Ge_xC_y/Si EPILAYER HALL DEVICES

机译：p型和n型应变Si_（1-X-Y）Ge_xc_y / Si Epilayer Hall设备的移动性表征
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
43.METALORGANIC MOLECULAR BEAM EPITAXY OF GaAsP FOR VISIBLE LIGHT-EMITTING DEVICES ON Si

机译：GaASP的金属多功能分子束外延在Si上可见发光器件
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
44.GROWTH OF GaN ON THIN SI {111} LAYERS BONDED TO SI {100} SUBSTRATES

机译：GaN在薄的Si {111}层上粘合到Si {100}基板上
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年
45.LATTICE ENGINEERING USING LATERAL OXIDATION OF AlAs: AN APPROACH TO GENERATE SUBSTRATES WITH NEW LATTICE CONSTANTS

机译：使用alas横向氧化的格子工程：一种用新的晶格常数产生基材的方法
- 会议名称：《Symposium on III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics》 | 1999年