Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor

摘要

Traps responsible for negative bias temperature instability (NBTI) in a nitrided submicron n-type metal-oxide-semiconductor field effect transistor (nMOSFET) were investigated in an atomic scale. By spin dependent transport, we could observe interfacial P-b-centers distinguishably and show that NBTI occurs mainly through an increase in P-b1-center rather than P-b0-center. This can be explained in terms of the atomic bonding configuration between silicon, nitrogen, and hydrogen atoms.