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Method and structure for in-line monitoring of negative bias temperature instability in field effect transistors
Method and structure for in-line monitoring of negative bias temperature instability in field effect transistors
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机译:在线监测场效应晶体管中负偏置温度不稳定性的方法和结构
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摘要
A MOSFET test structure and associated electronics for rapidly heating the MOSFET gate oxide and for applying a stress voltage to the gate. The structure has at least one polysilicon gate with two spaced contacts that permit a heating current to flow through the gate thus rapidly raising the gate temperature to a desired level. External electronics permit applying a measured stress voltage to the gate. The structure is particularly useful in NBTI testing of p-MOSFETs.
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