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Integrated Reliability Workshop Final Report, 2004 IEEE International
Integrated Reliability Workshop Final Report, 2004 IEEE International
召开年:
2004
召开地:
出版时间:
-
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-
会议论文
热门论文
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1.
Bayesian approach to reliability projection for high k dielectric thin films
机译:
高k介电薄膜可靠性投影的贝叶斯方法
作者:
Luo W.
;
Kuo W.
;
Kuo Y.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
semiconductor device reliability;
Weibull distribution;
Bayes methods;
dielectric thin films;
Weibull parameter;
Bayesian reliability projection method;
high k dielectric thin films;
reliability estimation;
nano devices;
lifetime distribution;
empirical acceleration function;
hierarchical Bayesian framework;
uncertainty modeling;
2.
DRAM standby current failure: the influence of hot carrier degradation on voltage level-up shifter circuit
机译:
DRAM待机电流故障:热载流子退化对升压转换器电路的影响
作者:
Lee K.J.
;
Seo J.Y.
;
Jung J.W.
;
Jung G.J.
;
Lee J.H.
;
Hwang S.J.
;
Yoon C.K.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
DRAM chips;
hot carriers;
CMOS memory circuits;
standby state current failure;
DRAM;
hot carrier degradation;
voltage level-up shifter circuit;
CMOS level-up shifter;
level shifter on/off time delay;
n-MOSFET ON-state current decrease;
hot carrier injection;
HCI;
3.
Atomic scale defects involved in NBTI MOSFET reliability
机译:
NBTI MOSFET可靠性中涉及的原子尺度缺陷
作者:
Campbell J.P.
;
Lenahan P.M.
;
Krishnan A.T.
;
Krishnan S.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device measurement;
semiconductor device reliability;
thermal stability;
paramagnetic resonance;
electron-hole recombination;
dangling bonds;
interface states;
atomic scale defects;
MOSFET reliability;
NBTI;
negative bias temperature instability;
electron spin resonance;
ESR;
spin dependent recombination;
SDR;
P/sub b0/ centers;
interface silicon dangling bond defects;
interface state generation process;
Si-SiO/sub 2/;
4.
Dopant influence on polysilicon capacitor oxide failure
机译:
掺杂剂对多晶硅电容器氧化物失效的影响
作者:
Towner J.M.
;
Naughton J.J.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOS capacitors;
doping profiles;
surface contamination;
plasma CVD;
interpolysilicon capacitive structures;
integrated capacitors;
capacitor oxide integrity degradation;
dopant cross contamination;
exposed capacitor oxide surface;
polysilicon capacitor oxide failure;
mixed signal process;
n type dopant implants;
p type dopant implants;
PECVD cluster tool;
oxide defectivity;
0.5 micron;
Si-SiO/sub 2/;
5.
Gate oxide integrity improvement by optimising poly deposition process
机译:
通过优化多晶硅沉积工艺来提高栅极氧化物的完整性
作者:
Tze Kiong Ng
;
Yap A.
;
Keng Foo Lo
;
Poh Chuan Ang
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
leakage currents;
dielectric thin films;
crystal microstructure;
dielectric breakdown;
reliability failure mechanism;
post process effects;
gate leakage current;
gate oxide integrity;
oxide thickness;
amorphous poly deposition process optimisation;
poly grain variation;
BiCMOS devices;
gate oxide reliability degradation;
deposition temperatures;
poly grain oxide protrusion;
oxide high temperature softening;
13.5 nm;
550 degC;
530 degC;
60 nm;
65 nm;
6.
Hydrogen release and defect generation rate in ultra-thin oxides MOSFET devices
机译:
超薄氧化物中的氢释放和缺陷产生率MOSFET器件
作者:
Huard V.
;
Denais M.
;
Monsieur F.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device models;
leakage currents;
semiconductor device breakdown;
MOSFET;
interface states;
dielectric thin films;
hydrogen;
oxide breakdown;
MOSFET;
interface trap density;
SILC increase;
interface trap creation;
oxide defect generation rate;
temperature dependence;
ultra-thin oxides;
MOSFET devices;
diffusion-limited model;
hydrogen release time dynamics;
disorder-related reaction-limited model;
H;
7.
Mentoring in the technical environment
机译:
在技术环境中进行指导
作者:
Massey D.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
employee welfare;
teaching;
engineering education;
team working;
technical environment mentoring;
semiconductor industry;
team effectiveness tool;
individual team member role;
mentoring opportunities;
guidance;
counselling;
teaching;
8.
Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO/sub 2/ and high-k dielectrics) MOS devices
机译:
使用氢多振动激发(薄SiO / sub 2 /和高k电介质)为击穿电荷建模MOS器件
作者:
Ribes
;
G.
;
Bruyere
;
S.
;
Denais
;
M.
;
Roy
;
D.
;
Ghibaudo
;
G.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
silicon compounds;
hydrogen;
semiconductor device breakdown;
semiconductor device models;
dielectric thin films;
MOSFET;
interface states;
charge to breakdown modelling;
hydrogen multivibrational excitation;
and high-k dielectrics;
MOS device gate oxide breakdown;
oxide bulk defect generation;
time to breakdown power-law dependence;
hydrogen release defect generation probability;
quantitative hydrogen release model;
stress polarizations;
PMOS devices;
NMOS devices;
interface state generation modes;
MVHR;
SiO/sub 2/;
H;
9.
New insights into threshold voltage shifts for ultrathin gate oxides MOSFETs
机译:
关于超薄栅极氧化物MOSFET的阈值电压漂移的新见解
作者:
Heh D.
;
Vogel E.M.
;
Bernstein J.B.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device models;
semiconductor device reliability;
dielectric thin films;
MOSFET;
carrier mobility;
interface states;
stress-induced threshold voltage shifts;
ultrathin gate oxides;
p-channel MOSFET;
n-channel MOSFET;
carrier channel mobility degradation;
shift polarity dependence;
Coulombic charge generation;
oxide degradation mechanisms;
flat band voltage shift;
interface traps;
10.
Process dependence of hot carrier degradation in PMOSFETS
机译:
PMOSFET中热载流子退化的过程依赖性
作者:
Li E.
;
Prasad S.
;
Duong L.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device reliability;
nitridation;
boron;
fluorine;
interface states;
electron traps;
hot carriers;
annealing;
ion implantation;
gate oxide nitridation;
interface trap generation;
electron trapping;
hot carrier degradation process dependence;
PMOSFET gate oxide;
nitridation;
dual-poly-gate;
boron penetration;
NMOS;
PMOS;
high-temperature annealing;
oxide lifetime reduction;
gate implantation species;
source/drain implantation species;
shallow junction process;
hot carrier reliability;
NO anneal;
B;
NO;
BF/sub 2/;
f;
11.
Pseudo-progressive breakdown of ultra-thin nitrided gate oxide
机译:
超薄氮化栅氧化物的伪渐进击穿
作者:
Reiner J.C.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
dielectric thin films;
semiconductor device breakdown;
semiconductor device reliability;
leakage currents;
ultra-thin nitrided gate oxide;
pseudo-progressive breakdown;
n-MOST;
effective oxide thickness;
EOT;
leakage current versus time curves;
spontaneous breakdown;
successive breakdown;
multiple breakdown events;
reliability assessment failure criteria;
breakdown occurrence time statistics;
1.6 nm;
12.
Reliability issues in advanced monolithic embedded high voltage CMOS technologies
机译:
先进的单片嵌入式高压CMOS技术中的可靠性问题
作者:
Guoqiao Tao
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
power integrated circuits;
CMOS integrated circuits;
integrated circuit reliability;
isolation technology;
semiconductor device breakdown;
semiconductor device reliability;
dielectric thin films;
trench-isolation technology;
STI edge gate oxide thinning;
injection induced bipolar breakdown;
CMOS technology reliability;
high-voltage CMOS;
high-voltage gate oxide integrity;
transistor reliability;
low-k dielectrics;
13.
Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques CMOS transistors
机译:
以脉冲栅电压技术为特征的based基电介质的俘获和俘获机制CMOS晶体管
作者:
Ribes G.
;
Bruyere S.
;
Roy D.
;
Muller M.
;
Denais M.
;
Huard V.
;
Skotnicki T.
;
Ghibaudo G.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
electron traps;
hafnium compounds;
silicon compounds;
dielectric thin films;
MOSFET;
semiconductor device measurement;
detrapping kinetics;
hafnium based dielectrics;
pulse gate voltage techniques;
CMOS transistors;
electron trap energy distribution;
high-k dielectrics;
transient charge trapping;
HfO/sub 2/-SiO/sub 2/;
14.
90 nm node damascene copper stress voiding model and lifetime extrapolation methodology
机译:
90 nm节点大马士革铜应力空洞模型和寿命外推方法
作者:
Federspiel X.
;
Orain S.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit modelling;
integrated circuit metallisation;
integrated circuit interconnections;
copper;
extrapolation;
life testing;
voids (solid);
thermal expansion;
annealing;
electric resistance;
accelerated tests;
damascene copper stress voiding model;
lifetime extrapolation methodology;
thermal expansion mismatch induced stress;
interconnect integrity;
sub-via vacancy coalescence;
void formation;
resistance evolution predictive model;
stress induced voiding;
via chain type;
isothermal annealing;
temperature dependent resistance increase;
geometry dependent resistance increase;
test structure optimization;
lifetime acceleration factors;
90 nm;
1000 h;
Cu;
15.
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects
机译:
双镶嵌铜互连中电迁移引起的降解机理的模型
作者:
Sukharev V.
;
Zschech E.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit modelling;
voids (solid);
integrated circuit interconnections;
integrated circuit metallisation;
copper;
void formation;
void movement;
void growth;
interconnect reliability-related failures;
electromigration-induced degradation mechanisms;
dual-inlaid copper interconnects;
void nucleation;
atom migration driving forces;
mass balance equation;
coupled electromagnetics;
heat transfer;
elasticity;
interface mass transport;
interface bonding strengths;
interface diffusivity;
weak interfaces;
strengthened interfaces;
copper/capping layer interfaces;
SEM;
Cu;
16.
Analytical extraction of thermal conductivities of low k dielectrics for advanced technologies
机译:
低k电介质导热系数的分析提取
作者:
Ney D.
;
Girault V.
;
Federspiel X.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit modelling;
thermal resistance;
integrated circuit interconnections;
integrated circuit reliability;
thermal conductivity;
dielectric thin films;
thermal management (packaging);
glass;
copper;
electromigration;
thermal resistance measurement;
Joule heating measurements;
interconnect Joule heating limitation;
BEOL reliability;
thermal conductivity analytical extraction;
low k dielectrics;
thermal management;
fluorinated silicate glass;
phosphorous silicate glass;
FSG;
PSG;
embedded copper lines;
dielectric stack configurations;
thermal model;
root mean square currents;
dissipated power;
IMD;
electromigration;
25 degC;
SiOCH;
Cu;
17.
Anomalous NMOSFET hot carrier degradation due to hole injection in a DGO CMOS process
机译:
DGO CMOS工艺中的空穴注入导致NMOSFET热载流子异常退化
作者:
Brisbin D.
;
Mirgorodski Y.
;
Chaparala P.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device models;
semiconductor device reliability;
MOSFET;
hot carriers;
charge injection;
interface states;
etching;
hole traps;
impact ionisation;
semiconductor device measurement;
dual gate oxide NMOSFET;
HC degradation behavior model;
hot carrier reliability;
anomalous NMOSFET hot carrier degradation;
hole injection;
DGO CMOS process;
back-end-of-line processing steps;
interface states;
dangling bond passivation;
dielectric contact etch stop process;
HC injected positive trapped charge;
positive charge injection;
secondary impact ionization site;
SiON;
Si-SiO/sub 2/;
18.
NBTI: what we know and what we need to know - a tutorial addressing the current understanding and challenges for the future
机译:
NBTI:我们所知道的和我们需要知道的-一个解决当前理解和未来挑战的教程
作者:
Massey J.G.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device reliability;
NBTI frequency dependence;
CMOS technologies;
negative bias temperature instability;
pMOSFET reliability;
device scaling limiting factor;
gate oxide processes;
relaxation;
19.
A temperature accelerated model for high state retention loss of nitride storage flash memory
机译:
氮化物存储闪存的高状态保留损耗的温度加速模型
作者:
Lee M.Y.
;
Zous N.K.
;
Huang T.
;
Tsai W.J.
;
Kuo A.
;
Wang T.
;
Yin S.
;
Chih-Yuan Lu
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
flash memories;
integrated circuit reliability;
life testing;
integrated circuit modelling;
tunnelling;
electron traps;
temperature accelerated model;
high state retention loss;
nitride storage flash memory;
thermally emitted electron tunneling;
nitride layer;
bottom oxide traps;
MXVAND;
bake temperature;
bake time;
cycling number dependence;
erase degradation;
oxide trap growth rate;
20.
A comprehensive analysis of NFET degradation due to off-state stress
机译:
断态应力导致的NFET退化的综合分析
作者:
Hofmann K.
;
Holzhauser S.
;
Kuo C.Y.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device reliability;
electron traps;
impact ionisation;
NCS reliability;
NMOS;
off-state stress;
NFET performance degradation;
nonconducting stress;
DRAM;
logic;
threshold voltage increase;
saturation current decrease;
electron trap generation;
impact ionization;
degradation power law time dependence;
transistor parameter drift;
21.
Modeling interconnect behavior with a calibrated FEM model
机译:
使用校准的FEM模型对互连行为进行建模
作者:
Strong A.
;
Chen F.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit modelling;
integrated circuit interconnections;
finite element analysis;
heat transfer;
heat transfer;
interconnect behavior modeling;
calibrated FEM model;
power dissipation;
heat dissipation;
heat flow;
finite element method;
FEM tool;
22.
Fast wafer level data acquisition for reliability characterization of sub-100 nm CMOS technologies
机译:
快速晶圆级数据采集,可表征低于100 nm CMOS技术的可靠性
作者:
Kerber A.
;
Kerber M.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device measurement;
semiconductor device reliability;
CMOS integrated circuits;
electric current measurement;
convertors;
semiconductor device breakdown;
dielectric thin films;
fast wafer level data acquisition;
CMOS technology reliability characterization;
wafer level current measurements;
analog input/output PCI card;
current-voltage converters;
measurement time resolution;
source measurement unit;
SMU;
time dependent dielectric breakdown measurements;
MOSFET;
gate dielectrics;
charge trapping measurements;
100 nm;
SiON;
HfO/sub 2/;
23.
Hot carrier stress study in Hf-silicate NMOS transistors
机译:
H硅酸盐NMOS晶体管的热载流子应力研究
作者:
Sim J.H.
;
Lee B.H.
;
Choi R.
;
Song S.C.
;
Young C.D.
;
Zeitzoff P.
;
Kwong D.L.
;
Bersuker G.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
hafnium compounds;
titanium compounds;
hot carriers;
MOSFET;
hole traps;
electron traps;
constant voltage stress;
hot carrier stress effects;
NMOSFET;
poly gate electrode;
stress bias dependant positive charge;
hole generation/trapping process;
reversible threshold voltage shift;
reversible electron trapping;
NMOS transistors;
CVS;
HCS;
cold carrier induced hole generation;
high-k stacks;
stress stability;
HfSiO-Si;
TiN;
24.
Impact of buried layer processing on gate oxide integrity CMOS processing
机译:
埋层处理对栅极氧化物完整性的影响CMOS处理
作者:
OConnell B.
;
Yang R.
;
Yindeepol W.
;
De Santis J.
;
Strachan A.
;
Coppock W.
;
Foote R.
;
Dark C.
;
Sethna P.
;
Chaparala P.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
CMOS integrated circuits;
leakage currents;
buried layers;
silicon-on-insulator;
isolation technology;
MOS channel leakage;
buried layer processing;
gate oxide integrity;
CMOS processing;
SOI;
silicon-on-insulator;
deep trench isolation;
CMOS capacitor reliability;
bulk silicon substrates;
SOI substrates;
degradation mechanisms;
metal contaminant gettering;
25.
Mechanism of dynamic NBTI of pMOSFETs
机译:
pMOSFET的动态NBTI机理
作者:
Zhu B.
;
Suehle J.S.
;
Bernstein J.B.
;
Chen Y.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device measurement;
semiconductor device models;
annealing;
thermal stability;
interface states;
unipolar stress NBTI annealing;
dynamic NBTI;
pMOSFET;
negative bias temperature instability;
parameter shift frequency dependence;
threshold voltage shift;
DC stress;
fixed oxide charge reduction;
interface traps;
26.
Survey of oxide degradation in inverter circuits using 2.0 nm MOS devices
机译:
使用2.0 nm MOS器件的逆变器电路中氧化物降解的调查
作者:
Ogas M.L.
;
Southwick R.G. III
;
Cheek B.J.
;
Baker R.J.
;
Bersuker G.
;
Knowlton W.B.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device breakdown;
semiconductor device reliability;
logic gates;
MOSFET;
CMOS logic circuits;
leakage currents;
semiconductor device measurement;
integrated circuit measurement;
dielectric breakdown;
inverter circuit oxide degradation;
MOS devices;
CMOS inverter circuits;
gate oxide wearout;
pMOSFET;
constant voltage stress technique;
inverter time-domain performance deterioration;
rise time increase;
DC inverter characteristics;
drive current decrease;
logic process window;
ultra-thin gate oxides;
gate leakage current;
2.0 nm;
27.
Electromigration of MRAM-customized Cu interconnects with cladding barriers and top cap
机译:
MRAM定制的带有互连层和顶盖的Cu互连的电迁移
作者:
Gajewski D.A.
;
Meixner T.
;
Feil B.
;
Lien M.
;
Walls J.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit measurement;
integrated circuit reliability;
magnetic storage;
magnetoresistive devices;
random-access storage;
electromigration;
integrated circuit interconnections;
integrated circuit metallisation;
copper;
magnetoresistive random access memory;
flux concentrating cladding;
electromigration;
MRAM-customized interconnects;
cladding barriers;
MRAM top cap;
activation energy;
Cu;
28.
DF-RQA practice for SoC design for reliability and quality assurance
机译:
SoC的DF-RQA做法可靠性和质量保证设计
作者:
Marom H.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
design for manufacture;
design for quality;
design for testability;
system-on-chip;
integrated circuit design;
integrated circuit reliability;
quality assurance;
risk management;
leakage currents;
product development;
design for manufacturability;
design for test;
DF-RQA practice;
SoC;
product development phases;
DF-RQA document;
design for reliability;
quality assurance;
simulation;
proactive measures;
risk assessment;
burn in leakage effects;
proactive collaboration method;
NPI;
new product introduction;
29.
New gate oxide wear-out model for accurate device lifetime projections on vertical drain NMOSFET
机译:
新的栅极氧化物磨损模型可在垂直漏极NMOSFET上准确预测器件寿命
作者:
Pae S.
;
Agostinelli M.
;
Curello G.
;
Lau S.
;
Ramey S.
;
Alavi M.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device models;
MOSFET;
semiconductor device reliability;
hot carriers;
gate oxide wear-out model;
device lifetime projection;
vertical drain NMOSFET;
VDNMOS reliability;
hot carrier degradation effect;
technology scaling;
low voltage stress data;
drain/gate bias lifetime dependence;
maximum operating drain voltage;
CMOS process;
30.
New hole trapping characterization during NBTI in 65 nm node technology with distinct nitridation processing MOSFETs
机译:
在65 nm节点技术的NBTI中具有独特的氮化处理工艺的新空穴陷阱表征MOSFETs
作者:
Denais M.
;
Bravaix A.
;
Huard V.
;
Parthasarathy C.
;
Bidaud M.
;
Ribes G.
;
Barge D.
;
Vishnubhotla L.
;
Tavel B.
;
Rey-Tauriac Y.
;
Perrier F.
;
Revil N.
;
Arnaud F.
;
Stolk P.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
thermal stability;
nitridation;
hole traps;
semiconductor device measurement;
MOSFET;
negative bias temperature instability;
plasma nitridation;
hole trapping/detrapping characterization;
gate-oxide nitridation NBTI effects;
NBTI degradation;
DC NBTI characterization;
logic circuits;
MOSFET;
combined stressing/measurement;
ultra-thin gate-oxides;
65 nm;
1.4 to 1.6 nm;
SiO/sub 2/-Si;
N;
31.
An innovative multi-via test structure for wafer-level isothermal electromigration
机译:
用于晶片级等温电迁移的创新多通孔测试结构
作者:
Tseng S.F.C.
;
Chien W.-T.K.
;
Wang W.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit testing;
integrated circuit interconnections;
integrated circuit metallisation;
electromigration;
aluminium;
copper;
BEOL reliability;
scaled interconnects;
wafer-level isothermal electromigration testing;
multiple via test structure;
Iso-EM test;
wafer-level reliability test;
via current density;
local joule heating stress;
metal stripes;
aluminum processes;
copper processes;
Al;
Cu;
32.
Circuit and silicide impact on the correlation between TLP and ESD (HBM and MM)
机译:
电路和硅化物对TLP和ESD(HBM和MM)之间的相关性产生影响
作者:
Huang S.C.
;
Lee J.H.
;
Lee S.C.
;
Chen K.M.
;
Song M.H.
;
Chiang C.Y.
;
Mi-Chang Chang
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit testing;
semiconductor device testing;
electrostatic discharge;
correlation methods;
TLP-ESD correlation;
HBM;
MM;
transmission line pulse measurement;
ESD performance;
ESD testing;
human body models;
machine models;
IT2;
0.13 mm;
33.
Effects of capillary forces on the global thinning of copper metallization under electromigration stress
机译:
电迁移应力下毛细管力对铜金属化整体变薄的影响
作者:
Jun-Ho Choy
;
Zhang Y.
;
Kavanagh K.L.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit modelling;
integrated circuit reliability;
surface diffusion;
capillarity;
integrated circuit metallisation;
integrated circuit interconnections;
electromigration;
finite difference methods;
boundary-elements methods;
electrostatics;
voids (solid);
copper;
surface diffusion;
atomic transport;
capillary force effects;
metallization global thinning;
migration stress;
void shape evolution;
copper/dielectric interface;
electron wind forces;
axisymetric 3D finite difference numerical method;
boundary element method;
electrostatics;
capillary instability growth;
delayed open circuit failure;
void shape stabilization;
electric field parallel void elongation;
Cu;
34.
Effects of drain to gate stress on NMOSFET with polysilicon/Hf-silicate gate stack
机译:
漏极到栅极应力对具有多晶硅/ H硅酸盐栅极叠层的NMOSFET的影响
作者:
Choi R.
;
Lee B.H.
;
Young C.D.
;
Sim J.H.
;
Mathews K.
;
Bersuker G.
;
Zeitzoff P.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
hafnium compounds;
dielectric thin films;
MOSFET;
semiconductor device measurement;
semiconductor device reliability;
interface states;
high-k dielectrics;
stress induced dielectric wearout;
stress-induced degradation polarity dependence;
asymmetric subthreshold swing degradation;
short channel MOSFET;
off-state drain/gate stress;
NMOSFET gate stack;
negative bias stress;
interface states density;
asymmetric channel degradation;
stressed region/channel geometric ratio;
device scaling;
Si-HfSiON;
35.
Electromigration in narrow and large damascene copper lines
机译:
狭窄和大型镶嵌铜线中的电迁移
作者:
Girault V.
;
Terrier F.
;
Gregoire M.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit metallisation;
integrated circuit interconnections;
copper;
grain size;
electromigration;
grain boundary diffusion;
circuit reliability;
deposited copper average grain size;
electromigration;
narrow damascene copper lines;
large damascene copper lines;
activation energy;
copper/top barrier interface migration;
grain boundary migration;
0.90 eV;
0.74 eV;
Cu;
36.
Electromigration-limited lifetime of aluminum bond pads
机译:
铝焊盘的电迁移极限寿命
作者:
Hommel M.
;
Penka S.
;
Ungar F.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
integrated circuit reliability;
integrated circuit metallisation;
integrated circuit interconnections;
aluminium;
electromigration;
voids (solid);
pad electromigration reliability;
voiding;
electromigration resistance;
current flow;
probe area;
pad electromigration-limited lifetime;
aluminum bond pads;
bond pad maximum current capacity;
product area minimization;
pad number optimization;
current path;
probing;
aluminum thickness;
90 nm;
200 mA;
Al;
37.
Gate oxide reliability and deuterated CMOS processing
机译:
栅极氧化物的可靠性和氘代CMOS处理
作者:
Hof A.J.
;
Kovalgin A.
;
van Schaijk R.
;
Baks W.M.
;
Schmitz J.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MIS devices;
CMOS integrated circuits;
semiconductor device reliability;
deuterium;
dielectric thin films;
annealing;
hot carriers;
isotope effects;
gate oxide reliability;
deuterated CMOS processing;
MOS gate dielectric stability;
post metal anneal;
oxidation stage;
hot carrier degradation;
deuterium isotope effect;
high quality oxide charge to breakdown;
gate oxide thickness;
D;
38.
Improvement of spacer particle induced reliability failures
机译:
改善隔离颗粒引起的可靠性故障
作者:
Tseng S.
;
Chien K.
;
Ruan V.
;
Liao S.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
logic circuits;
integrated circuit reliability;
integrated circuit testing;
grain size;
etching;
spacer particle induced reliability failures;
poly pillar defect;
logic based process;
chip probe yield loss;
high temperature operating life;
HTOL;
SiON film grain size;
etching rate different;
spacer oxide deposition;
spacer etch;
reliability failures;
gate oxide integrity failures;
burn-in failures;
two-step poly etch;
etching selectivity;
wafer-level reliability control;
0.18 mm;
SiON;
39.
Mobility evaluation in high-k devices MOSFETs
机译:
高k器件MOSFETs的迁移率评估
作者:
Bersuker G.
;
Zeitzoff P.
;
Sim J.H.
;
Lee B.H.
;
Choi R.
;
Brown G.
;
Young C.D.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device measurement;
electron traps;
dielectric thin films;
carrier mobility;
NMOS transistors;
MOSFET;
fast electron trapping;
high-k gate dielectrics;
threshold voltage magnitude;
drain current DC measurements;
intrinsic channel carrier mobility;
pulse I/sub d/-V/sub g/ technique;
DC mobility correction factor;
40.
Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS
机译:
PMOS负偏压温度不稳定性期间界面陷阱产生的氧化物场依赖性
作者:
Denais M.
;
Huard V.
;
Parthasarathy C.
;
Ribes G.
;
Perrier F.
;
Revil N.
;
Bravaix A.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device models;
semiconductor device measurement;
semiconductor device reliability;
interface states;
nitridation;
optimisation;
thermal stability;
NBTI related reliability;
trap generation oxide field dependence;
interface trap generation;
negative bias temperature instability;
PMOS;
NBTI gate-oxide thickness dependence;
gate-oxide quality;
nitrogen incorporation;
threshold voltage shift;
interface trapped charge effect reduction;
nitrided devices;
gate-oxide process optimization security margin;
N;
41.
Procedure for quantitative fWLR monitoring of gate dielectric reliability
机译:
栅极电介质可靠性的定量fWLR监控程序
作者:
Vollertsen R.-P.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
condition monitoring;
integrated circuit testing;
semiconductor device testing;
integrated circuit reliability;
semiconductor device reliability;
dielectric thin films;
life testing;
semiconductor device breakdown;
quantitative fWLR monitoring;
quantitative gate dielectric reliability monitoring;
highly accelerated constant voltage stress;
time resolution;
reliable breakdown detection;
control card reliability limit;
fast wafer level reliability stress method;
voltage acceleration data base;
critical monitoring parameter;
defect density;
charge to breakdown;
pre-stress voltage ramp;
constant voltage test;
42.
Recovery of NBTI degradation in HfSiON/metal gate transistors
机译:
HfSiON /金属栅晶体管中NBTI退化的恢复
作者:
Harris H.R.
;
Choi R.
;
Lee B.H.
;
Young C.D.
;
Sim J.H.
;
Mathews K.
;
Zeitzoff P.
;
Majhi P.
;
Bersuker G.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
titanium compounds;
hafnium compounds;
MOSFET;
semiconductor device measurement;
electron traps;
NBTI degradation recovery;
threshold voltage instability temperature dependence;
charge trapping;
dielectric electron trapping;
electron de-trapping;
PMOS transistors;
transconductance swing;
subthreshold swing;
activation energy;
negative bias stress;
temperature stress;
threshold voltage shift;
0.042 eV;
HfSiON-TiN;
43.
Reliability response of plasma nitrided gate dielectrics to physical and electrical CET-scaling
机译:
等离子体氮化栅极电介质对物理和电气CET缩放的可靠性响应
作者:
Geilenkeuser R.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOSFET;
semiconductor device reliability;
nitridation;
nitrogen;
phosphorus;
boron;
doping profiles;
dielectric thin films;
ion implantation;
leakage currents;
plasma nitrided gate dielectrics;
physical CET-scaling;
electrical CET-scaling;
TDDB reliability;
polysilicon predoping;
gate-dielectric thickness scaling;
NMOS devices;
PMOS devices;
ion implantation;
leakage current density;
modal lifetime;
implant dose;
gate dielectrics reliability;
capacitance equivalent thickness;
1.28 nm;
1.58 nm;
N;
P;
B;
44.
Reversible leakage current switching in thin gate oxides - soft breakdown or noise? MOSFETs
机译:
薄栅极氧化物中的可逆泄漏电流开关-软击穿还是噪声? MOSFETs
作者:
Reiner J.C.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
semiconductor device reliability;
leakage currents;
semiconductor device breakdown;
semiconductor device noise;
MOSFET;
electron traps;
semiconductor device measurement;
RTS-fluctuations;
quantised leakage current switching model;
reversible leakage current switching;
thin gate oxides;
soft breakdown;
gate oxide noise;
electrically stressed p-MOSFET;
inversion mode;
gate oxide thickness;
reversible switching;
hard breakdown;
positively charged traps;
electron trapping;
electron detrapping;
pre-breakdown leakage current switching;
p-MOSFET reliability;
breakdown precursors;
bursts;
3.5 nm;
45.
Study of stress-induced leakage current and charge loss of nonvolatile memory cell with 70 /spl Aring/ tunnel oxide using floating-gate integrator technique
机译:
浮栅积分技术研究应力为70 / spl Aring /隧道氧化物的非易失性存储单元的漏电流和电荷损失
作者:
Bin Wang
;
Chih-Hsin Wang
;
Yanjun Ma
;
Diorio
;
C.
;
Humes
;
T.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
MOS memory circuits;
random-access storage;
leakage currents;
electric current measurement;
semiconductor device measurement;
tunnelling;
MOSFET;
stress-induced leakage current;
charge loss;
nonvolatile memory cell;
tunnel oxide;
floating-gate integrator technique;
tunneling current measurement;
gate dielectric properties;
MOSFET;
charge-loss mechanisms;
logic NVM cell;
floating gate SILC;
floating gate memory retention lifetime;
charge retention;
memory cell retention lifetime extrapolation;
70 /spl Aring/;
3/spl times/10/sup -22/ A;
10 year;
46.
The study of sputtered RF Ta on the PID in Cu dual damascene technology plasma induced damage
机译:
铜双镶嵌技术中PID溅射RF Ta的研究等离子体诱导损伤
作者:
Wen Hui Lu
;
Kim Keng Teo
;
Chaw Sing Ho
;
Andrew K.L.Y.
;
Keng Foo Lo
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
copper;
tantalum;
sputtered coatings;
integrated circuit metallisation;
dielectric thin films;
leakage currents;
sputtered RF Ta;
PID;
dual damascene technology;
barrier metal sputtering process;
dual gate oxide;
low-throughput RF Ta;
high-throughput RF Ta;
plasma charging damage;
antenna structure gate leakage;
thick gate leakage;
plasma induced damage;
0.13 micron;
Ta-Cu;
47.
Thermal and electromigration challenges for advanced interconnects
机译:
先进互连的热迁移和电迁移挑战
作者:
Baozhen Li
;
Harmon D.
;
Gill J.
;
Chen F.
;
Sullivan T.
会议名称:
《Integrated Reliability Workshop Final Report, 2004 IEEE International》
|
2004年
关键词:
thermal resistance;
integrated circuit interconnections;
electromigration;
integrated circuit reliability;
dielectric thin films;
current density;
copper;
joule heating effects;
thermal conductivity;
metal line current carrying capacity;
interconnects;
electromigration;
low k dielectric materials;
maximum scaling;
reliability;
thermal-EM interactions;
maximum allowed current density;
Cu;
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