Enhancing threshold voltage of AIGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

摘要

This paper presents an approach in fabricating normally off AIGaN/GaN high electron mobility transistors (HEMTs). The fabrication technique was based on the carbon-doped GaN epitaxy layers on silicon substrate and the nano rod structure of the gate region in AIGaN/GaN HEMTs. Using this method, the threshold voltage of AIGaN/GaN HEMTs can be shifted from-2V in a conventional depletion-mode (D-mode) AIGaN/GaN HEMT to 2V in an enhancement-mode (E-mode) AIGaN/GaN HEMT.