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SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HIGH ELECTRON MOBILITY TRANSISTORS AND DEPLETION MODE GROUP III-N HIGH ELECTRON MOBILITY TRANSISTORS
SEMICONDUCTOR STRUCTURE HAVING BOTH ENHANCEMENT MODE GROUP III-N HIGH ELECTRON MOBILITY TRANSISTORS AND DEPLETION MODE GROUP III-N HIGH ELECTRON MOBILITY TRANSISTORS
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机译:半导体结构具有增强模式III-N高电子迁移率晶体管和耗尽模式III-N高电子迁移率晶体管
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摘要
An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.
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