Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors

摘要

An Enhancement-Mode HEMT having a gate electrode with a doped, Group III-N material disposed between an electrically conductive gate electrode contact and a gate region of the Enhancement-Mode HEMT, such doped, Group III-N layer increasing resistivity of the Group III-N material to deplete the 2DEG under the gate at zero bias.