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Growth of continuous and ultrathin platinum films on tungsten adhesion layers using atomic layer deposition techniques

机译:使用原子层沉积技术在钨粘附层上生长连续和超薄铂膜

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摘要

Continuous and ultrathin platinum (Pt) films were deposited on tungsten (W) adhesion layers using atomic layer deposition (ALD) techniques. Pt ALD films were deposited at 120 °C using MeCpPtMe_3 and H_2 plasma as the reactants. X-ray reflectivity studies observed the rapid nucleation of the Pt film. X-ray photoelectron results were consistent with layer-by-layer growth suggesting a continuous Pt film at thicknesses > 1.5 nm. The high surface energy of the W ALD adhesion layer enables the growth of continuous and ultrathin films of lower surface energy metals and should facilitate the use of precious metals for a variety of applications.
机译:使用原子层沉积(ALD)技术在钨(W)粘附层上沉积连续和超薄铂(Pt)膜。使用MeCpPtMe_3和H_2等离子体作为反应物在120°C沉积Pt ALD膜。 X射线反射率研究观察到Pt膜迅速成核。 X射线光电子结果与逐层生长一致,表明厚度大于1.5 nm的连续Pt膜。 W ALD粘附层的高表面能使低表面能金属的连续和超薄膜生长成为可能,并应促进贵金属在各种应用中的使用。

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  • 来源
    《Applied Physics Letters》 |2012年第11期|p.111601.1-111601.4|共4页
  • 作者单位

    Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, USA;

    Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, USA;

    Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, USA;

    Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309, USA,Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309, USA;

    Electrochemical Energy Research Lab, General Motors Research and Development, Honeoye Falls,New York 14472, USA;

    Electrochemical Energy Research Lab, General Motors Research and Development, Honeoye Falls,New York 14472, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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