METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES

摘要

In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer within a process chamber, exposing the substrate to a first soak process (220) for a first tune period and depositing a nucleation layer (230) on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the substrate to a second soak process (240) for a second time period and depositing a bulk layer (250) on the nucleation layer In one example, the barrier layer contains titanium nitride and the first and second soak processes contain at least one reducing gas. The nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process and the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.