Low temperature grown GaNAsSb: A promising material for photoconductive switch application

摘要

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 ℃ by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10~7 Ωcm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ~1.3ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.