机译:Ar等离子体处理增强非晶InGaZnO薄膜晶体管的迁移率
Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
LG Display Co. Ltd., 1007 Deogeun-ri, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, South Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
Department of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul 120-749, South Korea;
机译:Ar / O_2等离子体和微波联合辐照对溶液沉积非晶InGaZnO薄膜晶体管电性能和稳定性的影响
机译:SiO2钝化层对非晶Ingazno薄膜晶体管中的移动增强的物理见解
机译:沉积后等离子体处理对等离子体辅助反应磁控溅射制备的非晶InGaZnO_x薄膜晶体管稳定性的影响
机译:自对准顶栅非晶InGaZnO薄膜晶体管中N / ar等离子体处理源/漏形成的比较
机译:用于有源矩阵液晶显示器的非晶硅薄膜晶体管的等离子体增强化学气相沉积问题
机译:具有埋沟道层的非晶InGaZnO薄膜晶体管的电性能和偏压应力稳定性
机译:通过自组装单层处理显着提高非常薄的InGazno薄膜晶体管