Delta-doped β-Ga_2O_3 thin films and β-(Al_(0.26)Ga_(0.74))_2O_3/β-Ga_2O_3 heterostructures grown by metalorganic vapor-phase epitaxy

摘要

We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown beta-Ga2O3 thin films using silane as a precursor. The delta-doped beta-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 x 10(12) cm(-2) to 9 x 10(12) cm(-2) with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density (n(s): 6.4 x 10(12) cm(-2)) degenerate electron sheet charge in a delta-doped beta-(Al0.26Ga0.74)(2)O-3/beta-Ga2O3 heterostructure. The total charge could also include a contribution from a parallel channel in the beta-(Al0.26Ga0.74)(2)O-3 alloy barrier.