Dependence of channel thickness on MoTe_2 transistor performance with Pt contact on a HfO_2 dielectric

摘要

We investigated the dependence of MoTe2 thickness on it is electrical properties by fabricating several transistors with channel thickness between ?6 layers and ?46 layers. The transistor with ?10-layer channel has the highest hole current, whereas the electron current shows monotonically increase with channel thickness. The measurements of I-ds?V-ds and temperature dependence show ohmic contact of p-type conduction and Schottky contact of n-type conduction. Thus, the highest hole current is observed in ?10-layer MoTe2 due to the highest mobility. However, the bandgap of MoTe2 decreases with it is thickness, leading to the reduce of Schottky barrier and the increase of electrons current.